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IRLL014NPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRLL014NPBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRLL014NPBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
PD- 95154
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
G
IRLL014NPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.14Ω
ID = 2.0A
S
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt
TJ, TSTG
Junction and Storage Temperature Range
Thermal Resistance
Max.
2.8
2.0
1.6
16
2.1
1.0
8.3
± 16
32
2.0
0.1
7.2
-55 to + 150
Parameter
Typ.
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
90
50
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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Max.
120
60
Units
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
4/20/04
1 Page 100 VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
IRLL014NPbF
100 VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
1
3.0V
20µs PULSE WIDTH
TJ = 25°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
3.0V
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10 100
V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics,
100 2.0 ID = 2.0A
1.5
10
TJ = 25°C
TJ = 150°C
VDS = 25V
1
20µs PULSE WIDTH
A
3.0 4.0 5.0 6.0 7.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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1.0
0.5
0.0
-60
VGS = 10V A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRLL014NPbF
15V
VDS
L
DRIVER
RG
10V
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
80 ID
TOP
1.8A
3.2A
BOTTOM 4.0A
60
40
20
0 VDD = 25V
A
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
6 www.irf.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRLL014NPBF | Power MOSFET ( Transistor ) | International Rectifier |