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PDF IRL630S Data sheet ( Hoja de datos )
| Número de pieza | IRL630S | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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HEXFET® Power MOSFET
PD - 9.1254
IRL630S
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
150°C Operating Temperature
VDSS = 200V
RDS(on) = 0.40Ω
ID = 9.0A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The SMD-220 is suitable
for high current applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 5.0V
Continuous Drain Current, VGS @ 5.0V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
9.0
5.7
36
74
3.1
0.59
0.025
±10
250
9.0
7.4
5.0
-55 to + 150
300 (1.6mm from case)
Thermal Resistance
Parameter
Min.
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
––––
––––
––––
––––
––––
––––
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Max.
1.7
40
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
To Order
Revision 0
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10
8
6
4
2
0A
25 50 75 100 125 150
TC, Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
IRL630S
RD
D.U.T.
VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
10
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
PD M
N o tes:
1. Duty factor D = t1 / t2
t1
t2
2 . P e a k TJ = PD M x Z th J C + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10AA
To Order
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRL630S.PDF ] | |
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