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IRL3713SPbF の電気的特性と機能

IRL3713SPbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRL3713SPbF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRL3713SPbF Datasheet, IRL3713SPbF PDF,ピン配置, 機能
SMPS MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l 100% RG Tested
l Lead-Free
VDSS
30V
PD - 97011B
IRL3713PbF
IRL3713SPbF
IRL3713LPbF
HEXFET® Power MOSFET
RDS(on) max (mW) ID
3.0@VGS = 10V
260A†
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3713PbF
D2Pak
TO-262
IRL3713SPbF IRL3713LPbF
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @Tc = 100°C
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ, TSTG
Linear Derating Factor
Junction and Storage Temperature Range
Max
30
± 20
h260
h180
h1040
330
170
2.2
-55 to +175
Units
V
V
A
W
W/°C
°C
Thermal Resistance
Symbol
iRθJC
fRqCS
fiRθJA
giRθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
Typ Max Units
––– 0.45*
0.50
–––
–––
62
°C/W
––– 40
* RθJC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes  through ‡ are on page 11
www.irf.com
1
07/22/05

1 Page





IRL3713SPbF pdf, ピン配列
IRL3713/S/LPbF
1000
100
VGS
TOP 10V
8.0V
6.0V
4.5V
4.0V
3.3V
2.8V
BOTTOM 2.5V
10
1
0.1
0.1
2.5V
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP 10V
8.0V
6.0V
4.5V
4.0V
3.3V
2.8V
BOTTOM 2.5V
10 2.5V
20µs PULSE WIDTH
1 TJ = 175 °C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 175° C
100
10
TJ = 25° C
V DS= 15V
20µs PULSE WIDTH
1
2.5 3.0 3.5 4.0 4.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = 260A
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRL3713SPbF 電子部品, 半導体
IRL3713/S/LPbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
3000
2500
2000
TOP
BOTTOM
ID
30A
38A
46A
1500
1000
500
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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部品番号部品説明メーカ
IRL3713SPbF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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