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IRGB8B60K PDF Data sheet ( 特性 )

部品番号 IRGB8B60K
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRGB8B60K Datasheet, IRGB8B60K PDF,ピン配置, 機能
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
C
G
E
n-channel
PD - 94545C
IRGB8B60K
IRGS8B60K
IRGSL8B60K
VCES = 600V
IC = 20A, TC=100°C
tsc>10µs, TJ=150°C
VCE(on) typ. = 1.8V
TO-220AB
IRGB8B60K
D2Pak
IRGS8B60K
TO-262
IRGSL8B60K
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
cICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Max.
600
28
19
56
56
±20
167
83
-55 to +175
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
dJunction-to-Ambient, typical socket mount
eJunction-to-Ambient (PCB Mount, Steady State)
Weight
www.irf.com
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
0.90
–––
62
40
–––
Units
°C/W
g
1
10/16/03

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