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IRGB4B60KD1PBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRGB4B60KD1PBF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRGB4B60KD1PBF Datasheet, IRGB4B60KD1PBF PDF,ピン配置, 機能
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
• TO-220 is available in PbF as Lead-Free
G
E
n-channel
PD - 95616
IRGB4B60KD1PbF
IRGS4B60KD1
IRGSL4B60KD1
VCES = 600V
IC = 7.6A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.1V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220
D2Pak
IRGB4B60KD1PbF IRGS4B60KD1
TO-262
IRGSL4B60KD1
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
cICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
TSTG
Operating Junction and
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics
Parameter
600
11
7.6
22
22
11
6.7
22
±20
63
31
-55 to +175
300 (0.063 in. (1.6mm) from case)
V
A
V
W
°C
Min.
Typ.
Max. Units
RθJC Junction-to-Case- IGBT
––– ––– 2.4 °C/W
RθJC Junction-to-Case- Diode
––– ––– 6.1
RθCS
Case-to-Sink, flat, greased surface
––– 0.50 –––
RθJA Junction-to-Ambient
––– –––
62
dRθJA
Junction-to-Ambient (PCB Mount, steady state) ––– –––
40
Wt Weight
––– 1.44 ––– g
www.irf.com
1
8/10/04

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