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IRGSL10B60KDのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | IRGSL10B60KD |
| |
部品説明 | INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRGSL10B60KDダウンロード(pdfファイル)リンクがあります。 Total 15 pages
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
C
G
E
n-channel
PD - 94382D
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
VCES = 600V
IC = 12A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
TO-220AB
D2Pak
TO-262
IRGB10B60KD IRGS10B60KD IRGSL10B60KD
Max.
600
22
12
44
44
22
10
44
± 20
156
62
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
0.8
3.4
–––
62
40
–––
Units
°C/W
g
1
8/18/04
1 Page IRG/B/S/SL10B60KD
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
180
160
140
120
100
80
60
40
20
0
0
20 40 60 80 100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
100 100
10 10 µs
20 µs
1 DC 100 µs
1ms
0.1
1
10 100 1000 10000
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
www.irf.com
10
1
0
10
100
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
1000
3
3Pages IRG/B/S/SL10B60KD
800
700
600
500
400
300
200
100
0
0
EOFF
EON
5 10 15 20 25
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=200µH; VCE= 400V
RG= 47Ω; VGE= 15V
1000
tdOFF
100
tdON
10
0
tF
tR
5
10 15 20 25
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=200µH; VCE= 400V
RG= 47Ω; VGE= 15V
500
450
400
350
300
250
200
150
100
50
0
0
EOFF
EON
50 100
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=200µH; VCE= 400V
ICE= 10A; VGE= 15V
6
1000
tdOFF
100
10
150 0
tdON
tR
tF
50 100
RG (Ω)
150
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=200µH; VCE= 400V
ICE= 10A; VGE= 15V
www.irf.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRGSL10B60KD | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
IRGSL10B60KDPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |