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IRGS15B60KDPbFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | IRGS15B60KDPbF |
| |
部品説明 | INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRGS15B60KDPbFダウンロード(pdfファイル)リンクがあります。 Total 15 pages
PD - 95194A
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT
Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
C
G
E
n-channel
IRGB15B60KDPbF
IRGS15B60KDPbF
IRGSL15B60KDPbF
VCES = 600V
IC = 15A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
TO-220AB
D2Pak
TO-262
IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF
Max.
600
31
15
62
62
31
15
64
± 20
208
83
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
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Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
0.6
2.1
–––
62
40
–––
Units
°C/W
g
1
10/03/05
1 Page IRGB/S/SL15B60KDPbF
35 240
30
25
20
15
8 10
5
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
TC (°C)
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
100
10 µs
10
100 µs
1
1ms
DC
0.1
1
10
100
1000
10000
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
www.irf.com
100
10
1
0
10
100
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
1000
3
3Pages IRGB/S/SL15B60KDPbF
1800
1600
1400
1200
1000
800
600
400
200
0
0
EOFF
EON
10 20 30 40 50
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=200µH; VCE= 400V
RG= 22Ω; VGE= 15V
1000
tdOFF
100
tdON
tF
tR
10
0 10 20 30 40 50
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=200µH; VCE= 400V
RG= 22Ω; VGE= 15V
900
800
700
600
500
400
300
200
100
0
0
EOFF
EON
50 100
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=200µH; VCE= 400V
ICE= 15A; VGE= 15V
6
150
1000
tdOFF
100
tdON
tR
tF
10
0
50 100
RG (Ω)
150
Fig. 16- Typ. Switching Time vs. RG
TJ = 150°C; L=200µH; VCE= 600V
ICE= 15A; VGE= 15V
www.irf.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRGS15B60KDPbF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |