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PDF IRG4PSH71KD Data sheet ( Hoja de datos )
| Número de pieza | IRG4PSH71KD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 91688A
PRELIMINARY IRG4PSH71KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinforced pins
• High short circuit rating IGBTs, optimized for
motorcontrol
• Minimum switching losses combined with low
conduction losses
• Tightest parameter distribution
• IGBT co-packaged with ultrafast soft recovery
antiparallel diode
• Creepage distance increased to 5.35mm
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
VCES = 1200V
VCE(on) typ. = 2.97V
@VGE = 15V, IC = 42A
Benefits
• Highest current rating copack IGBT
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
• HEXFREDTM diode optimized for operation with
IGBT, to minimize EMI, noise and switching losses
SUPER - 247
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance\ Mechanical
RθJC
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Max.
1200
78
42
156
156
42
156
10
± 20
350
140
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
µs
V
W
°C
Min.
–––
–––
–––
–––
20.0(2.0)
–––
Typ.
–––
–––
0.24
–––
–––
6 (0.21)
Max.
0.36
0.69
–––
38
–––
–––
Units
°C/W
N (kgf)
g (oz)
1
5/11/99
1 page  
IRG4PSH71KD
10000
8000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
6000
Cies
4000
2000
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCC = 400V
I C = 42A
15
10
5
0
0 100 200 300 400 500
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
15
VCC = 800V
VGE = 15V
14
TJ
IC
= 25 °C
= 42A
13
12
11
10
9
0 10 20 30 40
RG , Gate Resistance (Ω)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
(Ω)
100 RG = 5.0Ω
VGE = 15V
VCC = 800V
10
IC = 84 A
IC = 42 A
IC = 21 A
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4PSH71KD.PDF ] | |
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