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IRG4PSC71KD の電気的特性と機能

IRG4PSC71KDのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG4PSC71KD
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG4PSC71KD Datasheet, IRG4PSC71KD PDF,ピン配置, 機能
PD - 91684A
PRELIMINARY IRG4PSC71KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinforced pins
• High abort circuit rating IGBTs, optimized for
motorcontrol
• Minimum switching losses combined with low
conduction losses
• Tightest parameter distribution
• IGBT co-packaged with ultrafast soft recovery
antiparallel diode
• Creepage distance increased to 5.35mm
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 1.83V
@VGE = 15V, IC = 60A
Benefits
• Highest current rating copack IGBT
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
• HEXFREDTM diode optimized for operation with
IGBT, to minimize EMI, noise and switching losses
SUPER - 247
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance\ Mechanical
RθJC
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Max.
600
85…
60
200
200
50
200
10
± 20
350
140
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
µs
V
W
°C
Min.
–––
–––
–––
–––
20.0(2.0)
–––
Typ.
–––
–––
0.24
–––
–––
6 (0.21)
Max.
0.36
0.69
–––
38
–––
–––
Units
°C/W
N (kgf)
g (oz)
1
5/11/99

1 Page





IRG4PSC71KD pdf, ピン配列
60
45
S qua re wave:
30 6 0% of rate d
v olta ge
I
15
Ideal diodes
0
0.1
IRG4PSC71KD
F or b oth:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P o w e r D is s ip a tio n = 58 W
1 10
f, Frequency (KHz)
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1 0 0 0 1000
100
TJ = 1 5 0 °C
10 TJ = 2 5 °C
VGE = 15 V
1 20µs PULSE W IDTH A
0 1 23 4
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
100
TJ = 150 °C
10
TJ = 25 °C
VCC = 50V
5µs PULSE WIDTH
1
5 6 7 8 9 10 11
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


IRG4PSC71KD 電子部品, 半導体
IRG4PSC71KD
24 RG = 5.0
T J = 150 °C
20
VCC = 480V
VGE = 15V
16
12
8
4
0
30 60 90
I C, Collector Current (A)
120
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
1000
VGE = 20V
T J = 125 oC
100
SAFE OPERATING AREA
10
1 10 100
VCE, Collector-to-Emitter Voltage (V)
1000
Fig. 12 - Turn-Off SOA
100
10 TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.4 0.8 1.2 1.6 2.0 2.4
Forwa rd V oltag e D rop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com

6 Page



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共有リンク

Link :


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