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IRG4PC50WPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | IRG4PC50WPBF |
| |
部品説明 | INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRG4PC50WPBFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD - 94858
IRG4PC50WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction
offers tighter parameters distribution, exceptional
reliability
Lead-Free
C
G
E
n-channel
VCES = 600V
VCE(on) max. = 2.30V
@VGE = 15V, IC = 27A
Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >300 kHz)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
600
55
27
220
220
± 20
170
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
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Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
0.24
6 (0.21)
Max.
0.64
40
Units
°C/W
g (oz)
1
11/26/03
1 Page IRG4PC50WPbF
100
80
60
Square wave:
60% of rated
voltage
40
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 40W
Triangular wave:
Clamp voltage:
80% of rated
20
Ideal diodes
0
0.1 1 10 100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
A
1000
1000
1000
100
TJ = 150 °C
10
TJ = 25 °C
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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100
TJ = 150 °C
TJ = 25 °C
10
VCC = 50V
5µs PULSE WIDTH
1
5 6 7 8 9 10 11
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
3Pages IRG4PC50WPbF
3.0 RG = O5.h0mΩ
TJ = 150 °C
VCC = 480V
VGE = 15V
2.0
1000
VGE
TJ
=
=
20V
125 oC
100
1.0
0.0
0
10 20 30 40 50
I C, Collector-to-emitter Current (A)
60
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
10
SAFE OPERATING AREA
1
1 10 100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
6 www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRG4PC50WPBF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRG4PC50WPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |