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IRFSL38N20DPBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSL38N20DPBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRFSL38N20DPBF Datasheet, IRFSL38N20DPBF PDF,ピン配置, 機能
PROVISIONAL
PD - 97001A
IRFB38N20DPbF
SMPS MOSFET
IRFS38N20DPbF
IRFSL38N20DPbF
Applications
l High frequency DC-DC converters
HEXFET® Power MOSFET
Key Parameters
l Plasma Display Panel
l Lead-Free
VDS
VDS (Avalanche) min.
Benefits
l Low Gate-to-Drain Charge to Reduce
RDS(ON) max @ 10V
TJ max
200
260
54
175
V
V
m:
°C
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
D2Pak
TO-262
IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V ‡
Continuous Drain Current, VGS @ 10V ‡
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation ‡
Linear Derating Factor ‡
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Max.
38*
27*
180
3.8
230*
1.5*
± 30
9.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface †
Junction-to-Ambient†
Junction-to-Ambient‡
Typ.
–––
0.50
–––
–––
Max.
0.47*
–––
62
40
Units
°C/W
* RθJC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes  through ‡ are on page 11
www.irf.com
1
09/09/05

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