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IRFU430APBF の電気的特性と機能

IRFU430APBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFU430APBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFU430APBF Datasheet, IRFU430APBF PDF,ピン配置, 機能
SMPS MOSFET
PD -95076B
IRFR430APbF
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High speed power switching
l Lead-Free
IRFU430APbF
HEXFET® Power MOSFET
VDSS
500V
RDS(on) max
1.7
ID
5.0A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective COSS specified (See AN 1001)
D-Pak
IRFR430A
I-Pak
IRFU430A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Max.
5.0
3.2
20
110
0.91
± 30
3.0
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
130
5.0
11
Units
A
W
W/°C
V
V/ns
Units
mJ
A
mJ
Typ.
–––
0.50
–––
Max.
1.1
–––
62
Units
°C/W
1
03/02/07

1 Page





IRFU430APBF pdf, ピン配列
IRFR/U430APbF
100 VGS
TOP
15V
10V
8.0V
10 7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
0.01
0.001
0.1
4.5V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
10V
8.0V
7.0V
10 6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
0.01
0.1
4.5V
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100.00
10.00
TJ = 150°C
1.00
TJ = 25°C
0.10
0.01
4.0
VDS = 100V
20µs PULSE WIDTH
6.0 8.0 10.0 12.0 14.0
VGS, Gate-to-Source Voltage (V)
16.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0
I D = 5.0A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFU430APBF 電子部品, 半導体
IRFR/U430APbF
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
250
ID
TOP 2.2A
3.2A
200
BOTTOM
5.0A
150
100
50
0
25 50 75 100
Starting Tj, Junction Temperature
125
( °C)
150
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
5.0
4.5
4.0 ID = 250µA
3.5
3.0
2.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
www.irf.com

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共有リンク

Link :


部品番号部品説明メーカ
IRFU430APBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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