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IRFU430APBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRFU430APBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFU430APBFダウンロード(pdfファイル)リンクがあります。 Total 10 pages
SMPS MOSFET
PD -95076B
IRFR430APbF
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High speed power switching
l Lead-Free
IRFU430APbF
HEXFET® Power MOSFET
VDSS
500V
RDS(on) max
1.7Ω
ID
5.0A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective COSS specified (See AN 1001)
D-Pak
IRFR430A
I-Pak
IRFU430A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Max.
5.0
3.2
20
110
0.91
± 30
3.0
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
130
5.0
11
Units
A
W
W/°C
V
V/ns
Units
mJ
A
mJ
Typ.
–––
0.50
–––
Max.
1.1
–––
62
Units
°C/W
1
03/02/07
1 Page IRFR/U430APbF
100 VGS
TOP
15V
10V
8.0V
10 7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
0.01
0.001
0.1
4.5V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
10V
8.0V
7.0V
10 6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
0.01
0.1
4.5V
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100.00
10.00
TJ = 150°C
1.00
TJ = 25°C
0.10
0.01
4.0
VDS = 100V
20µs PULSE WIDTH
6.0 8.0 10.0 12.0 14.0
VGS, Gate-to-Source Voltage (V)
16.0
Fig 3. Typical Transfer Characteristics
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3.0
I D = 5.0A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRFR/U430APbF
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
250
ID
TOP 2.2A
3.2A
200
BOTTOM
5.0A
150
100
50
0
25 50 75 100
Starting Tj, Junction Temperature
125
( °C)
150
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
5.0
4.5
4.0 ID = 250µA
3.5
3.0
2.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
www.irf.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRFU430APBF | HEXFET Power MOSFET | International Rectifier |