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Número de pieza | IRFR430APBF | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFR430APBF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! SMPS MOSFET
PD -95076B
IRFR430APbF
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High speed power switching
l Lead-Free
IRFU430APbF
HEXFET® Power MOSFET
VDSS
500V
RDS(on) max
1.7Ω
ID
5.0A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective COSS specified (See AN 1001)
D-Pak
IRFR430A
I-Pak
IRFU430A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Max.
5.0
3.2
20
110
0.91
± 30
3.0
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
130
5.0
11
Units
A
W
W/°C
V
V/ns
Units
mJ
A
mJ
Typ.
–––
0.50
–––
Max.
1.1
–––
62
Units
°C/W
1
03/02/07
1 page IRFR/U430APbF
5.5
4.4
3.3
2.2
1.1
0.0
25
50 75 100
TC , Case Temperature
125
( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
150
10
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC
+TC
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRFR430APBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFR430APBF | HEXFET Power MOSFET | International Rectifier |
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