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PDF IRFR430APBF Data sheet ( Hoja de datos )

Número de pieza IRFR430APBF
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRFR430APBF Hoja de datos, Descripción, Manual

SMPS MOSFET
PD -95076B
IRFR430APbF
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High speed power switching
l Lead-Free
IRFU430APbF
HEXFET® Power MOSFET
VDSS
500V
RDS(on) max
1.7
ID
5.0A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective COSS specified (See AN 1001)
D-Pak
IRFR430A
I-Pak
IRFU430A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Max.
5.0
3.2
20
110
0.91
± 30
3.0
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
130
5.0
11
Units
A
W
W/°C
V
V/ns
Units
mJ
A
mJ
Typ.
–––
0.50
–––
Max.
1.1
–––
62
Units
°C/W
1
03/02/07

1 page




IRFR430APBF pdf
IRFR/U430APbF
5.5
4.4
3.3
2.2
1.1
0.0
25
50 75 100
TC , Case Temperature
125
( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
150
10
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC
+TC
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5

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