(PDF) IRFPS59N60C Datasheet - HEXFET Power MOSFET

Número de pieza	IRFPS59N60C
Descripción	HEXFET Power MOSFET
Fabricantes	International Rectifier
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No Preview Available ! PD - 90380 PROVISIONAL IRFPS59N60C SMPS MOSFET HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching VDSS 600V RDS(on) max 0.045Ω ID 59A Benefits l Low Gate Charge Qg Reduces Drive Required l Improved Gate Resistance for Faster Switching l Fully Characterized Capacitance and Avalanche Voltage and Current l Lowest Conduction Loss in Package Outline l Effective COSS specified (See AN 1001) Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended clip force Super-247™ Max. 59 37 240 390 3.1 ± 20 TBD -40 to + 150 -55 to + 150 300 (1.6mm from case ) 20 Units A W W/°C V V/ns N Applicable Off Line SMPS Topologies: l Power Factor Correction Boost l Full Bridge www.irf.com 1 11/2/99 1 page

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PDF IRFPS59N60C Data sheet ( Hoja de datos )