|
|
IRFPS40N60KのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRFPS40N60K |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFPS40N60Kダウンロード(pdfファイル)リンクがあります。 Total 8 pages
SMPS MOSFET
PD - 94384A
IRFPS40N60K
Applications
l Hard Switching Primary or PFC Switch
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Motor Drive
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Enhanced Body Diode dv/dt Capability
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
VDSS
600V
HEXFET® Power MOSFET
RDS(on) typ.
0.110 Ω
ID
40A
SUPER TO-247AC
Max.
40
24
160
570
4.5
± 30
7.5
-55 to + 150
300
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
–––
–––
Max.
600
40
57
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.22
–––
40
Units
°C/W
www.irf.com
1
10/20/04
1 Page IRFPS40N60K
1000
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
0.01
0.001
0.1
4.5V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
10 5.0V
BOTTOM 4.5V
1
4.5V
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100 TJ= 150 °C
10
TJ= 25 °C
1
0.1
0.01
4
V DS= 50V
20µs PULSE WIDTH
6 8 10 11
V GS, Gate-to-Source Voltage (V)
13
15
Fig 3. Typical Transfer Characteristics
www.irf.com
3.5
I D = 38A
3.0
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRFPS40N60K
1200
960
TOP
BOTTOM
ID
17A
24A
38A
720
480
240
0
25 50 75 100
Starting Tj, Junction Temperature
125
( °C)
150
Fig 12a. Maximum Avalanche Energy
Vs. Drain Current
5.0
4.5
4.0
ID = 250µA
3.5
3.0
2.5
2.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01Ω
+
- VDD
A
Fig 12b. Unclamped Inductive Test Circuit
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13a. Gate Charge Test Circuit
6
V(BR)DSS
tp
IAS
Fig 12c. Unclamped Inductive Waveforms
VGS V
QGS
VG
QG
QGD
Charge
Fig 13b. Basic Gate Charge Waveform
www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ IRFPS40N60K データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFPS40N60K | HEXFET Power MOSFET | International Rectifier |
IRFPS40N60K | Power MOSFET ( Transistor ) | Vishay |