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PDF IRFL1006PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFL1006PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95316
IRFL1006PbF
HEXFET® Power MOSFET
Surface Mount
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
G
D
VDSS = 60V
RDS(on) = 0.22Ω
ID = 1.6A
S
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy *
Peak Diode Recovery dv/dt
TJ, TSTG
Junction and Storage Temperature Range
Thermal Resistance
Max.
2.3
1.6
1.3
6.4
2.1
1.0
8.3
± 20
54
1.6
0.1
5.0
-55 to + 150
Parameter
Typ.
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
90
50
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
Max.
120
60
Units
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
05/26/04
1 page  
IRFL1006PbF
2.0
1.5
1.0
0.5
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFL1006PBF.PDF ] | |
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