DataSheet.jp

IRFIB8N50KPBF の電気的特性と機能

IRFIB8N50KPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFIB8N50KPBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRFIB8N50KPBFダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

IRFIB8N50KPBF Datasheet, IRFIB8N50KPBF PDF,ピン配置, 機能
SMPS MOSFET
PD - 95751
IRFIB8N50KPbF
Applications
l Switch Mode Power Supply (SMPS)
l UninterruptIble Power Supply
l High Speed Power Switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
VGS
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
cIAR Avalanche Current
cEAR Repetitive Avalanche Energy
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient
VDSS
500V
HEXFET® Power MOSFET
RDS(on) typ.
ID
290m
6.7A
TO-220
FULL-PAK
Max.
6.7
4.2
27
45
0.36
±30
17
-55 to + 150
300 (1.6mm from case )
1.1(10)
Typ.
–––
–––
–––
Max.
290
6.7
4.5
Typ.
–––
–––
Max.
2.76
65
Units
A
W
W/°C
V
V/ns
°C
N•m (lbf•in)
Units
mJ
A
mJ
Units
°C/W
www.irf.com
1
8/23/04

1 Page





IRFIB8N50KPBF pdf, ピン配列
IRFIB8N50KPbF
1000
100
10
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
1
0.1
0.01
0.001
0.1
5.0V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
12V
10V
8.0V
10 7.0V
6.0V
5.5V
BOTTOM 5.0V
1
5.0V
0.1
0.01
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100.00
10.00
TJ = 150°C
1.00
0.10
0.01
4.0
TJ = 25°C
VDS = 50V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 6.7A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFIB8N50KPBF 電子部品, 半導体
IRFIB8N50KPbF
700
ID
600 TOP 3.0A
4.2A
500 BOTTOM 6.7A
15V
400
300
200
100
0
25
50 75 100 125
Starting TJ , Junction Temperature (°C)
150
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 12c. Unclamped Inductive Test Circuit
Fig 12a. Maximum Avalanche Energy
Vs. Drain Current
V(BR)DSS
tp
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13a. Gate Charge Test Circuit
6
IAS
Fig 12d. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13b. Basic Gate Charge Waveform
www.irf.com

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ IRFIB8N50KPBF データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRFIB8N50KPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap