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IRFI4229PBF の電気的特性と機能

IRFI4229PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFI4229PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFI4229PBF Datasheet, IRFI4229PBF PDF,ピン配置, 機能
PDP SWITCH
PD - 97201
IRFI4229PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l150°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS max
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
IRP max @ TC= 100°C
TJ max
250
300
38
32
150
DD
V
V
m:
A
°C
G
S
D
G
S TO-220AB Full-Pak
GDS
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Repetitive Peak Current g
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case f
Junction-to-Ambient f
Notes  through … are on page 8
www.irf.com
Max.
±30
19
12
72
32
46
18
0.37
-40 to + 150
300
10lbxin (1.1Nxm)
Typ.
–––
–––
Max.
2.73
65
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
04/07/06

1 Page





IRFI4229PBF pdf, ピン配列
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
0.1
0.01
0.1
5.0V
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VDS = 25V
60µs PULSE WIDTH
10
1 TJ = 150°C
TJ = 25°C
0.1
34567
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1400
1200
1000
L = 220nH
C = 0.3µF
100°C
25°C
800
600
400
200
140 150 160 170 180 190 200 210
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
www.irf.com
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
IRFI4229PbF
5.0V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.0
ID = 11A
2.5 VGS = 10V
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
1400
1200
1000
L = 220nH
C = variable
100°C
25°C
800
600
400
200
0
100 110 120 130 140 150 160 170
ID, Peak Drain Current (A)
Fig 6. Typical EPULSE vs. Drain Current
3


3Pages


IRFI4229PBF 電子部品, 半導体
IRFI4229PbF
+
‚
-

RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
di/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductoorr CCuurrernetnt
Forward Drop
Ripple 5%
*VGS=10V
VDD
ISD
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 19a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 19b. Unclamped Inductive Waveforms
L
VCC
DUT
0
1K
Fig 20a. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 20b. Gate Charge Waveform
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRFI4229PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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