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IRFSL4410PbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSL4410PbF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 11 pages
		

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IRFSL4410PbF Datasheet, IRFSL4410PbF PDF,ピン配置, 機能
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 95707E
IRFB4410PbF
IRFS4410PbF
IRFSL4410PbF
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ.
8.0m:
:G max. 10m
S ID
88A
GDS
TO-220AB
IRFB4410PbF
GDS
D2Pak
IRFS4410PbF
GDS
TO-262
IRFSL4410PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÙAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
Parameter
kJunction-to-Case
RθCS
RθJA
RθJA
Case-to-Sink, Flat Greased Surface , TO-220
kJunction-to-Ambient, TO-220
jkJunction-to-Ambient (PCB Mount) , D2Pak
Max.
88™l
63™l
380
l200
l1.3
± 20
19
-55 to + 175
300
x x10lb in (1.1N m)
220
See Fig. 14, 15, 16a, 16b
Typ.
–––
0.50
–––
–––
Max.
l0.61
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
05/02/07

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