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ISL6613A の電気的特性と機能

ISL6613AのメーカーはIntersil Corporationです、この部品の機能は「(ISL6612A / ISL6613A) Advanced Synchronous Rectified Buck MOSFET Drivers」です。


製品の詳細 ( Datasheet PDF )

部品番号 ISL6613A
部品説明 (ISL6612A / ISL6613A) Advanced Synchronous Rectified Buck MOSFET Drivers
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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ISL6613A Datasheet, ISL6613A PDF,ピン配置, 機能
®
Data Sheet
Advanced Synchronous Rectified Buck
MOSFET Drivers with Pre-POR OVP
The ISL6612A and ISL6613A are high frequency MOSFET
drivers specifically designed to drive upper and lower power
N-Channel MOSFETs in a synchronous rectified buck
converter topology. These drivers combined with HIP63xx or
ISL65xx Multi-Phase Buck PWM controllers and N-Channel
MOSFETs form complete core-voltage regulator solutions for
advanced microprocessors.
The ISL6612A drives the upper gate to 12V, while the lower
gate can be independently driven over a range from 5V to
12V. The ISL6613A drives both upper and lower gates over
a range of 5V to 12V. This drive-voltage provides the
flexibility necessary to optimize applications involving trade-
offs between gate charge and conduction losses.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during initial startup.
These drivers also feature a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
ISL6612A, ISL6613A
July 27, 2006
FN9159.6
Features
• Pin-to-pin Compatible with HIP6601 SOIC family
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of rDS(ON) Conduction Offset Effect
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 2MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat
Sinking
• Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Core Regulators for Intel® and AMD® Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Technical Brief TB417 for Power Train Design, Layout
Guidelines, and Feedback Compensation Design
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2005, 2006. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.

1 Page





ISL6613A pdf, ピン配列
ISL6612A, ISL6613A
Ordering Information (Continued)
PART NUMBER
PART MARKING
TEMP.
RANGE (°C)
PACKAGE
PKG.
DWG. #
ISL6613AEIBZ (Note)
6613AEIBZ
-40 to +85
8 Ld EPSOIC (Pb-free)
M8.15B
ISL6613AEIBZ-T (Note) 6613AEIBZ
8 Ld EPSOIC Tape and Reel (Pb-free)
M8.15B
ISL6613AIB
ISL6613AIB
-40 to +85
8 Ld SOIC
M8.15
ISL6613AIB-T
ISL6613AIB
8 Ld SOIC Tape and Reel
M8.15
ISL6613AIBZ (Note)
6613AIBZ
-40 to +85
8 Ld SOIC (Pb-free)
M8.15
ISL6613AIBZ-T (Note)
6613AIBZ
8 Ld SOIC Tape and Reel (Pb-free)
M8.15
ISL6613AIR
13AI
-40 to +85
10 Ld 3x3 DFN
L10.3x3
ISL6613AIR-T
13AI
10 Ld 3x3 DFN Tape and Reel
L10.3x3
ISL6613AIRZ (Note)
3AIZ
-40 to +85
10 Ld 3x3 DFN (Pb-free)
L10.3x3
ISL6613AIRZ-T (Note)
3AIZ
10 Ld 3x3 DFN Tape and Reel (Pb-free)
L10.3x3
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
Check website for availability.
Pinouts
ISL6612ACB, ISL6612AIB, ISL6613ACB, ISL6613AIB (SOIC)
ISL6612AECB, ISL6612AEIB, ISL6613AECB, ISL6613AEIB
(EPSOIC)
TOP VIEW
UGATE 1
BOOT 2
PWM 3
GND 4
GND
8 PHASE
7 PVCC
6 VCC
5 LGATE
ISL6612ACR, ISL6612AIR, ISL6613ACR, ISL6613AIR
(10 LD 3X3 DFN)
TOP VIEW
UGATE 1
BOOT 2
N/C 3
PWM 4
GND 5
GND
10 PHASE
9 PVCC
8 N/C
7 VCC
6 LGATE
Block Diagram
ISL6612A AND ISL6613A
VCC
PWM
UVCC
+5V
10K
8K
Pre-POR OVP
FEATURES
POR/
CONTROL
LOGIC
SHOOT-
THROUGH
PROTECTION
(LVCC)
BOOT
UGATE
PHASE
PVCC
UVCC = VCC FOR ISL6612A
UVCC = PVCC FOR ISL6613A
LGATE
PAD
GND
FOR DFN AND EPSOIC-DEVICES, THE PAD ON THE BOTTOM SIDE OF
THE PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND.
3 FN9159.6
July 27, 2006


3Pages


ISL6613A 電子部品, 半導体
ISL6612A, ISL6613A
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Three-State Upper Gate Rising Threshold
VCC = 12V
- 3.20 -
V
Three-State Upper Gate Falling Threshold
VCC = 12V
- 2.60 -
V
Shutdown Holdoff Time
UGATE Rise Time
LGATE Rise Time
UGATE Fall Time
LGATE Fall Time
UGATE Turn-On Propagation Delay (Note 4)
LGATE Turn-On Propagation Delay (Note 4)
UGATE Turn-Off Propagation Delay (Note 4)
LGATE Turn-Off Propagation Delay (Note 4)
LG/UG Three-State Propagation Delay (Note 4)
OUTPUT (Note 4)
tTSSHD
tRU
tRL
tFU
tFL
tPDHU
tPDHL
tPDLU
tPDLL
tPDTS
VPVCC = 12V, 3nF Load, 10% to 90%
VPVCC = 12V, 3nF Load, 10% to 90%
VPVCC = 12V, 3nF Load, 90% to 10%
VPVCC = 12V, 3nF Load, 90% to 10%
VPVCC = 12V, 3nF Load, Adaptive
VPVCC = 12V, 3nF Load, Adaptive
VPVCC = 12V, 3nF Load
VPVCC = 12V, 3nF Load
VPVCC = 12V, 3nF Load
- 245 -
- 26 -
- 18 -
- 18 -
- 12 -
- 10 -
- 10 -
- 10 -
- 10 -
- 10 -
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Upper Drive Source Current
IU_SOURCE VPVCC = 12V, 3nF Load
Upper Drive Source Impedance
RU_SOURCE 150mA Source Current
Upper Drive Sink Current
IU_SINK VPVCC = 12V, 3nF Load
Upper Drive Transition Sink Impedance
RU_SINK_TR 70ns With Respect To PWM Falling
Upper Drive DC Sink Impedance
RU_SINK_DC 150mA Source Current
Lower Drive Source Current
IL_SOURCE VPVCC = 12V, 3nF Load
Lower Drive Source Impedance
RL_SOURCE 150mA Source Current
Lower Drive Sink Current
IL_SINK VPVCC = 12V, 3nF Load
Lower Drive Sink Impedance
RL_SINK 150mA Sink Current
NOTE:
4. Guaranteed by design. Not 100% tested in production.
-
1.25
-
-
0.9
-
0.85
-
0.60
1.25
2.0
2
1.3
1.65
2
1.25
3
0.80
-
3.0
-
2.2
3.0
-
2.2
-
1.35
A
A
A
A
Functional Pin Description
PACKAGE PIN #
PIN
SOIC DFN SYMBOL
FUNCTION
1 1 UGATE Upper gate drive output. Connect to gate of high-side power N-Channel MOSFET.
2 2 BOOT Floating bootstrap supply pin for the upper gate drive. Connect the bootstrap capacitor between this pin and the
PHASE pin. The bootstrap capacitor provides the charge to turn on the upper MOSFET. See the Internal Bootstrap
Device section under DESCRIPTION for guidance in choosing the capacitor value.
- 3, 8 N/C No Connection.
3 4 PWM The PWM signal is the control input for the driver. The PWM signal can enter three distinct states during operation, see
the three-state PWM Input section under DESCRIPTION for further details. Connect this pin to the PWM output of the
controller.
4 5 GND Bias and reference ground. All signals are referenced to this node. It is also the power ground return of the driver.
5 6 LGATE Lower gate drive output. Connect to gate of the low-side power N-Channel MOSFET.
6 7 VCC Connect this pin to a +12V bias supply. Place a high quality low ESR ceramic capacitor from this pin to GND.
7 9 PVCC This pin supplies power to both upper and lower gate drives in ISL6613A; only the lower gate drive in ISL6612A.
Its operating range is +5V to 12V. Place a high quality low ESR ceramic capacitor from this pin to GND.
8 10 PHASE Connect this pin to the SOURCE of the upper MOSFET and the DRAIN of the lower MOSFET. This pin provides
a return path for the upper gate drive.
9 11 PAD Connect this pad to the power ground plane (GND) via thermally enhanced connection.
6 FN9159.6
July 27, 2006

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
ISL6613

(ISL6612 / ISL6613) Advanced Synchronous Rectified Buck MOSFET Drivers

Intersil Corporation
Intersil Corporation
ISL6613A

(ISL6612A / ISL6613A) Advanced Synchronous Rectified Buck MOSFET Drivers

Intersil Corporation
Intersil Corporation
ISL6613B

(ISL6612B / ISL6613B) Advanced Synchronous Rectified Buck MOSFET Drivers

Intersil Corporation
Intersil Corporation


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