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FQA7N80C の電気的特性と機能

FQA7N80CのメーカーはFairchild Semiconductorです、この部品の機能は「800V N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FQA7N80C
部品説明 800V N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FQA7N80C Datasheet, FQA7N80C PDF,ピン配置, 機能
FQA7N80C
800V N-Channel MOSFET
Features
• 7.0A, 800V, RDS(on) = 1.9@VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 10pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
September 2006
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G DS
TO-3P
FQA Series
G
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQA7N80C
800
7.0
4.4
28.0
± 30
580
7.0
30
4.0
198
1.75
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.63
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQA7N80C Rev. A1
1
www.fairchildsemi.com

1 Page





FQA7N80C pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Top : 15.V0GVS
101
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom: 5.5 V
100
10-1
Notes :
1. 250µs PulseTest
2. TC = 25
10-2
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1.
2.
V25DS0µ=s50PVulse
Test
468
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10
4.0
3.5
3.0 VGS = 10V
2.5 VGS = 20V
2.0
1.5
Note : TJ = 25
1.0
0 3 6 9 12 15 18
ID, Drain Current [A]
101
100
10-1
0.2
150 25
Notes :
1.
2.
2V5G0Sµ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 5. Capacitance Characteristics
2000
1500
Ciss
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
1000
500
0
10-1
Coss
Notes :
1.
2.
fV=GS1=M0HVz
Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 160V
10 VDS = 400V
VDS = 640V
8
6
4
2
Note : ID = 6.6A
0
0 5 10 15 20 25 30
QG, Total Gate Charge [nC]
3 www.fairchildsemi.com
FQA7N80C Rev. A1


3Pages


FQA7N80C 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6 www.fairchildsemi.com
FQA7N80C Rev. A1

6 Page



ページ 合計 : 9 ページ
 
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共有リンク

Link :


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