DataSheet.jp

IRF820ASPBF の電気的特性と機能

IRF820ASPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF820ASPBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRF820ASPBFダウンロード(pdfファイル)リンクがあります。

Total 10 pages

No Preview Available !

IRF820ASPBF Datasheet, IRF820ASPBF PDF,ピン配置, 機能
PD - 95533
SMPS MOSFET
IRF820ASPbF
IRF820ALPbF
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High speed power switching
l Lead-Free
VDSS
500V
RDS(on) max
3.0
ID
2.5A
Benefits
l Low Gate Charge Qg Results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective COSS specified (See AN 1001)
D2Pak
IRF820AS
TO-262
IRF820AL
www.DataSheet4U.com
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V†
Continuous Drain Current, VGS @ 10V†
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
2.5
1.6
10
50
0.4
± 30
3.4
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:
l Two Transistor Forward
l Half Bridge and Full Bridge
Notes  through … are on page 8
www.irf.com
1
7/20/04

1 Page





IRF820ASPBF pdf, ピン配列
10 VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
4.5V
0.01
0.1
20µs PULSE WIDTH
TJ= 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRF820AS/LPbF
10 VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
1
20µs PULSE WIDTH
TJ= 150 °C
10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
10
TJ = 150°C
1
TJ = 25°C
0.1
0.01
4.0
V DS= 50V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 2.5A
2.5
2.0
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF820ASPBF 電子部品, 半導体
IRF820AS/LPbF
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
300 ID
TOP
1.1A
250 1.6A
BOTTOM 2.5A
200
150
100
50
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
700
650
600
550
0.0
0.5 1.0 1.5 2.0
IAV , Avalanche Current ( A)
2.5
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
www.irf.com

6 Page



ページ 合計 : 10 ページ
 
PDF
ダウンロード
[ IRF820ASPBF データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRF820ASPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap