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IRF7240PBF の電気的特性と機能

IRF7240PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7240PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7240PBF Datasheet, IRF7240PBF PDF,ピン配置, 機能
www.DataSheet4U.com
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
VDSS
-40V
PD- 95253
IRF7240PbF
HEXFET® Power MOSFET
RDS(on) max
0.015@VGS = -10V
0.025@VGS = -4.5V
ID
-10.5A
-8.4A
Description
S1
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to S 2
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
S
3
extremely efficient device for use in battery and load G 4
management applications..
A
8D
7D
6D
5D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-40
-10.5
-8.6
-43
2.5
1.6
20
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
50
Units
°C/W
1
06/06/05

1 Page





IRF7240PBF pdf, ピン配列
IRF7240PbF
1000
100
VGS
TOP -15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
10
1
0.1
0.01
0.1
-2.70V
20µs PULSE WIDTH
TJ= 25 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP -15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
10
-2.70V
1
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 150°C
10
1 TJ = 25 °C
0.1
0.01
2.5
V DS= -25V
20µs PULSE WIDTH
3.0 3.5 4.0 4.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = -10.5A
1.5
1.0
0.5
VGS = -10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF7240PBF 電子部品, 半導体
IRF7240PbF
0.035
0.025
0.030
0.025
0.020
VGS = -4.5V
0.020
0.015
ID = -10.5A
0.010
0.0
4.0 8.0 12.0
-VGS, Gate -to -Source Voltage (V)
16.0
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.015
0.010
0
VGS = -10V
10 20 30 40
-ID , Drain Current (A)
50
Fig 13. Typical On-Resistance Vs.
Drain Current
QGS
VG
QG
QGD
Charge
Fig 14a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
www.irf.com

6 Page



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共有リンク

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部品番号部品説明メーカ
IRF7240PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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