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IRF7104PBF の電気的特性と機能

IRF7104PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7104PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7104PBF Datasheet, IRF7104PBF PDF,ピン配置, 機能
www.DataSheet4U.com
l Adavanced Process Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
S1
G1
S2
G2
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
PD - 95254
IRF7104PbF
HEXFET® Power MOSFET
1
8 D1
VDSS = -20V
2 7 D1
3 6 D2 RDS(on) = 0.250
4 5 D2
Top View
ID = -2.3A
SO-8
Max.
-2.3
-1.8
-10
2.0
0.016
± 12
-3.0
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient „
Min.
–––
Typ.
–––
Max.
62.5
Units
°C/W
1
09/21/04

1 Page





IRF7104PBF pdf, ピン配列
IRF7104PbF
-VDS , Drain-to-Source Voltage ( V )
Fig 1. Typical Output Characteristics
-VDS , Drain-to-Source Voltage ( V )
Fig 2. Typical Output Characteristics
-VGS , Gate-to-Source Voltage ( V )
Fig 3. Typical Transfer Characteristics
www.irf.com
TJ , Junction Temperature ( °C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF7104PBF 電子部品, 半導体
IRF7104PbF
-10V
QGS
VG
QG
QGD
Charge
Fig 12a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRF7104PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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