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IRF7104PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRF7104PBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7104PBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
www.DataSheet4U.com
l Adavanced Process Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
S1
G1
S2
G2
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
PD - 95254
IRF7104PbF
HEXFET® Power MOSFET
1
8 D1
VDSS = -20V
2 7 D1
3 6 D2 RDS(on) = 0.250Ω
4 5 D2
Top View
ID = -2.3A
SO-8
Max.
-2.3
-1.8
-10
2.0
0.016
± 12
-3.0
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Min.
Typ.
Max.
62.5
Units
°C/W
1
09/21/04
1 Page IRF7104PbF
-VDS , Drain-to-Source Voltage ( V )
Fig 1. Typical Output Characteristics
-VDS , Drain-to-Source Voltage ( V )
Fig 2. Typical Output Characteristics
-VGS , Gate-to-Source Voltage ( V )
Fig 3. Typical Transfer Characteristics
www.irf.com
TJ , Junction Temperature ( °C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7104PbF
-10V
QGS
VG
QG
QGD
Charge
Fig 12a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
6 www.irf.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ IRF7104PBF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF7104PBF | HEXFET Power MOSFET | International Rectifier |