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IRF624A の電気的特性と機能

IRF624AのメーカーはFairchild Semiconductorです、この部品の機能は「Advanced Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF624A
部品説明 Advanced Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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IRF624A Datasheet, IRF624A PDF,ピン配置, 機能
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Advanced Power MOSFET
IRF624A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 250V
Low RDS(ON) : 0.742 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BVDSS = 250 V
RDS(on) = 1.1
ID = 4.1 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
250
4.1
2.6
16
±30
84
4.1
4.9
4.8
49
0.39
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
--
0.5
--
Max.
2.54
--
62.5
Units
°C/W
1

1 Page





IRF624A pdf, ピン配列
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
101 Top :
VGS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5V
5.0 V
100 Bottom : 4.5V
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
2.5
2.0 VGS = 10 V
1.5
1.0
VGS = 20 V
0.5
@ Note : TJ = 25 oC
0.0
0 2 4 6 8 10 12 14 16
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
500
400 C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
300
200 C oss
100 C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRF624A
Fig 2. Transfer Characteristics
101
100
10-1
2
150 oC
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 40 V
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
10-1
10-2
0.2
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD , Source-Drain Voltage [V]
1.4
Fig 6. Gate Charge vs. Gate-Source Voltage
10 VDS = 50 V
VDS = 125 V
VDS = 200 V
5
@ Notes : ID = 4.1 A
0
0 3 6 9 12 15
QG , Total Gate Charge [nC]
3


3Pages


IRF624A 電子部品, 半導体
IRF624A
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
dv/dt controlled by “RG
IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a-t-e--P--u--l-s-e--W---i-d-t-h----
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF624

N-Channel Mosfet Transistor

Inchange Semiconductor
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IRF624

250V N-Channel MOSFET

Fairchild Semiconductor
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IRF624

Power MOSFET ( Transistor )

Vishay
Vishay
IRF624A

Advanced Power MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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