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PDF IRF5210SPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF5210SPBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Some Parameters are Different from
IRF5210S/L
l P-Channel
l Lead-Free
Description
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.
PD - 97049A
IRF5210SPbF
IRF5210LPbF
HEXFET® Power MOSFET
D
VDSS = -100V
G RDS(on) = 60mΩ
S ID = -38A
DD
S
D
G
D2Pak
IRF5210SPbF
G
Gate
D
Drain
S
D
G
TO-262
IRF5210LPbF
S
Source
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
cPulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
VGS
EAS
IAR
EAR
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
gRθJA Junction-to-Ambient (PCB Mount, steady state)
Max.
-38
-24
-140
3.1
170
1.3
± 20
120
-23
0.017
-7.4
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
www.irf.com
1
05/22/06
1 page  
40
35
30
25
20
15
10
5
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Case Temperature
IRF5210S/LPbF
VDS
VGS
RG
RD
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
τJ τJ
τ1 τ1
R1R1
CiC= iτ=i/τRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τι (sec)
τCτ 0.128309 0.000069
τ3τ3 0.377663 0.001772
0.244513 0.010024
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF5210SPBF.PDF ] | |
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