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IRF5210LPBF の電気的特性と機能

IRF5210LPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF5210LPBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF5210LPBF Datasheet, IRF5210LPBF PDF,ピン配置, 機能
www.DataSheet4U.com
l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Some Parameters are Different from
IRF5210S/L
l P-Channel
l Lead-Free
Description
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.
PD - 97049A
IRF5210SPbF
IRF5210LPbF
HEXFET® Power MOSFET
D
VDSS = -100V
G RDS(on) = 60m
S ID = -38A
DD
S
D
G
D2Pak
IRF5210SPbF
G
Gate
D
Drain
S
D
G
TO-262
IRF5210LPbF
S
Source
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
cPulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
VGS
EAS
IAR
EAR
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
gRθJA Junction-to-Ambient (PCB Mount, steady state)
Max.
-38
-24
-140
3.1
170
1.3
± 20
120
-23
0.017
-7.4
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
www.irf.com
1
05/22/06

1 Page





IRF5210LPBF pdf, ピン配列
IRF5210S/LPbF
1000
100
10
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-4.5V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10
-V DS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
10
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-4.5V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
-V DS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
10
TJ = 25°C
TJ = 150°C
1
0.1
2
VDS = -50V
60µs PULSE WIDTH
4 6 8 10 12 14
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0
ID = -38A
VGS = -10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3


3Pages


IRF5210LPBF 電子部品, 半導体
IRF5210S/LPbF
VDS
L
RG
-20V
tp
D.U.T
IAS
0.01
DRIVER
VDD
A
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-10V
QGS
VG
QG
QGD
Charge
Fig 14a. Basic Gate Charge Waveform
500
450 ID
TOP -8.7A
400 -14A
350 BOTTOM -23A
300
250
200
150
100
50
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
6 www.irf.com

6 Page



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共有リンク

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部品番号部品説明メーカ
IRF5210LPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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