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PDF CMM1100 Data sheet ( Hoja de datos )
| Número de pieza | CMM1100 | |
| Descripción | GaAs MMIC Low Noise Amplifier | |
| Fabricantes | Mimix Broadband | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CMM1100 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
May 2006 - Rev 01-May-06
Features
Self Bias Architecture
18.0 dB Small Signal Gain
3.5 dB Noise Figure
+11.0 dBm P1dB Compression Point
100% Visual Inspection to MIL-STD-883
Method 2010
CMM1100
Chip Device Layout
General Description
Mimix Broadband’s two stage 2.0-18.0 GHz GaAs MMIC
low noise amplifier has a small signal gain of 18.0 dB
with a noise figure of 3.5 dB across the band.This MMIC
uses Mimix Broadband’s 0.3 µm GaAs PHEMT device
model technology, and is based upon optical
lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide
a rugged part with backside via holes and gold
www.DataSheet4U.commetallization to allow either a conductive epoxy or
eutectic solder die attach process.This device is well
suited for fiber optic, microwave radio, military, space,
telecom infrastructure, test instrumentation and VSAT
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+8.0 VDC
180 mA
+10 dBm
-65 to +165 OC
-55 to MTTF Table1
MTTF Table1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Output Second Order Intercept Point (OIP2)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd1,2)
Supply Current (Id) (Vd1,2=5.0V)
Units Min. Typ. Max.
GHz 2.0
- 18.0
dB - 10.0 -
dB - 15.0 -
dB - 18.0 -
dB - +/-1.0 -
dB - 40.0 -
dB - 3.5 -
dBm - +16.0 -
dBm - +41.0 -
dBm - +25.0 -
VDC +4.5 +5.0 +7.0
mA 90 105 120
100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant
with an 80% pass rate required.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page  
2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
May 2006 - Rev 01-May-06
CMM1100
App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain
bias. Bias is nominally Vd1=Vd2=5V, ITOTAL=105mA. Additionally there are six total source resistors on chip.The three resistors on the input
stage are 16.6, 29.0 and 29.0 Ohms.The three resistors on the output stage are 12.5, 12.5 and 9.0 Ohms. One of these must be bonded to
ground for each amplifier stage to achieve performance as shown. Bonding to one of the other resistors or any or all in parallel may allow
additional performance adjustment. Lastly for additional stability pad #3 can be grounded instead of bond pad #2.
App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible.
Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Table (TBD) (Thermal Resistance (Rth) is 60.0ºC/W)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
Rth MTTF Hours
deg Celsius
C/W
E+
deg Celsius
C/W
E+
deg Celsius
C/W
E+
Bias Conditions: Vd1,2=5.0V, ITOTAL=105 mA
FITs
E+
E+
E+
Device Schematic
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CMM1100.PDF ] | |
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