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TB2600HのメーカーはDiodes Incorporatedです、この部品の機能は「(TB0640H - TB3500H) BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE」です。 |
部品番号 | TB2600H |
| |
部品説明 | (TB0640H - TB3500H) BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE | ||
メーカ | Diodes Incorporated | ||
ロゴ | |||
このページの下部にプレビューとTB2600Hダウンロード(pdfファイル)リンクがあります。 Total 4 pages
TB0640H - TB3500H
100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR
SURGE PROTECTIVE DEVICE
Features
· 100A Peak Pulse Current @ 10/1000ms
· 400A Peak Pulse Current @ 8/20ms
· 58 - 320V Stand-Off Voltages
· Oxide-Glass Passivated Junction
· Bi-Directional Protection In a Single Device
· High Off-State impedance and Low On-State
Voltage
Mechanical Data
B
· Case: SMB, Molded Plastic
· Plastic Material: UL Flammability
Classification Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
· Polarity: None; Bi-Directional Devices Have No
Polarity Indicator
G
H
· Weight: 0.093 grams (approx.)
· Marking: Date Code & Marking Code (See Page 4)
· Ordering Information: See Page 4
A
F
E
SMB
Dim Min Max
A 4.06 4.57
C B 3.30 3.94
C 1.96 2.21
D 0.15 0.31
D E 5.21 5.59
F 0.05 0.20
G 2.01 2.62
H 0.76 1.52
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Non-Repetitive Peak Impulse Current
@10/1000us
Non-Repetitive Peak On-State Current
@8.3ms (one-half cycle)
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Lead
Thermal Resistance, Junction to Ambient
Typical Positive Temperature Coefficient for Breakdown Voltage
Symbol
Ipp
ITSM
Tj
TSTG
RqJL
RqJA
DVBR/DTj
Maximum Rated Surge Waveform
Value
100
50
-40 to +150
-55 to +150
20
100
0.1
Unit
A
A
°C
°C
°C/W
°C/W
%/°C
Waveform
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
Standard
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T, K20/K21
FCC Part 68
GR-1089-CORE
Ipp (A)
500
400
250
200
160
100
DS30360 Rev. 3 - 2
1 of 4
100
50
Peak Value (Ipp)
tr = rise time to peak value
tp = decay time to half value
Half Value
0
0
tr
tp TIME
TB0640H - TB3500H
1 Page 100
10
1
0.1
0.01
VDRM = 50V
0.001
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 1 Off-State Current vs. Junction Temperature
1.1
1.05
VBO= (TJ)
VBO = (TJ = 25°C)
1
0.95
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (ºC)
Fig. 3 JRelative Variation of Breakover Voltage
vs. Junction Temperature
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5 IH = (TJ)
0.4 IH = (TJ = 25°C)
0.3
-50 -25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 Relative Variation of Holding Current vs.
Junction Temperature
1.2
1.15
1.1
VBR= (TJ)
VBR = (TJ = 25°C)
1.05
1
0.95
0.9
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION
TEMPERATURE (°C)
Fig. 2 Relative Variation of Breakdown Voltage
vs. Junction Temperature
100
10
Tj = 25°C
1
1 1.5 2 2.5 3 3.5 4 4.5 5
VT, ON-STATE VOLTAGE (V)
Fig. 4 On-State Current vs. On-State Voltage
1
CO= (VR)
CO = (VR = 1V)
Tj = 25°C
f = 1 Mhz
VRMS = 1V
0.1
1
10 100
VR, REVERSE VOLTAGE (V)
Fig. 6 Relative Variation of Normalized Capacitance
vs. Reverse Voltage Bias
DS30360 Rev. 3 - 2
3 of 4
TB0640H - TB3500H
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ TB2600H データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
TB2600H | (TB0640H - TB3500H) BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE | Diodes Incorporated |
TB2600H | (TB0640H - TB3500H) SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE | Lite-On |
TB2600L | (TB0640L - TB3500L) BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE | Diodes Incorporated |
TB2600M | 50A BIDIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTION DEVICE | Diodes |