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PDF 1N6775 Data sheet ( Hoja de datos )
| Número de pieza | 1N6775 | |
| Descripción | (1N6774 - 1N6777) ULTRAFAST SILICON POWER RECTIFIER | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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TECHNICAL DATA
ULTRAFAST SILICON POWER RECTIFIER
Qualified per MIL-PRF-19500/646
Devices
1N6774
1N6775
1N6776
1N6777
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Working Peak Reverse Voltage
Forward Current
TC = +100°C(1)
Forward Current Surge Peak TP = 8.30C
Operating & Storage Junction Temperature
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1) Derate at 300 mA/0C above TC = +1000C
Symbol 1N6774
VRWM
IF
IFSM
50
Top, Tstg
1N6775 1N6776
100 150
15
180
-65 to +150
1N6777
200
Unit
Vdc
Adc
Apk
0C
Symbol
RθJC
RθJA
Max.
2.0
40
Unit
0C/W
0C/W
ELECTRICAL CHARACTERISTICS (TC = +250C Unless Otherwise Noted)
outline
Characteristics
Symbol
Forward Voltage
IF = 8.0 Adc, pulsed
VF
IF = 15 Adc, pulsed
Reverse Current Leakage
VR = 0.8 of VRWM
IR
Thermal Impedance
IM =15 mAdc; IH = 9.9 Adc; tH = 200 ms; tMD = 35 µs; VH = 1
Vdc
ZØJX
Breakdown Voltage
IR = 10 µAdc
1N6774
1N6775
1N6776
VBR
1N6777
Junction Capacitance
VR = 5.0 Vdc, f = 1.0 MHz
CJ
Reverse Recovery Time
IF = 1.0 Adc; di/dt = 50 A/µs
trr
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Min.
50
100
150
200
TO-257*
(2-PIN-ISOLATED)
*See appendix A for
package
Max. Unit
1.00 Vdc
1.15
10 µAdc
0C/W
1.8
Vdc
300 pF
35 ηs
120101
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| PDF Descargar | [ Datasheet 1N6775.PDF ] | |
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