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PDF IRLIB4343PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLIB4343PBF | |
| Descripción | DIGITAL AUDIO MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 95755
DIGITAL AUDIO MOSFET IRLIB4343PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for Class-D Audio
Amplifier Applications
l Low RDSON for Improved Efficiency
l Low Qg and Qsw for Better THD and Improved
Efficiency
l Low Qrr for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
l Repetitive Avalanche Capability for Robustness and
Reliability
l Lead-Free
Key Parameters
VDS 55
RDS(ON) typ. @ VGS = 10V
42
RDS(ON) typ. @ VGS = 4.5V
57
Qg typ.
28
TJ max
175
D
V
m:
m:
nC
°C
G
S TO-220 Full-Pak
Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
fRθJC
Junction-to-Case
fRθJA Junction-to-Ambient
Max.
55
±20
19
13
80
39
20
0.26
-40 to + 175
x x10lb in (1.1N m)
Typ.
–––
–––
Max.
3.84
65
Units
V
A
W
W/°C
°C
Units
°C/W
Notes through
are on page 7
www.irf.com
1
8/24/04
1 page  
200
ID = 19A
150
100
TJ = 125°C
50
0
2.0
TJ = 25°C
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 12. On-Resistance Vs. Gate Voltage
1000
Duty Cycle = Single Pulse
100
0.01
10
0.05
0.10
1
IRLIB4343PbF
600
ID
500 TOP 2.7A
3.3A
BOTTOM 13A
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
1.0E-01
Fig 14. Typical Avalanche Current Vs.Pulsewidth
1.0E+00
1.0E+01
200
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 13A
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy Vs. Temperature
www.irf.com
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
5
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