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PDF IRF9952PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF9952PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95135
IRF9952PbF
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Very Low Gate Charge and
Switching Losses
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
Top View
N-Ch P-Ch
VDSS 30V -30V
RDS(on) 0.10Ω 0.25Ω
Recommended upgrade: IRF7309 or IRF7319
Lower profile/smaller equivalent: IRF7509
SO-8
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Single Pulse Avalanche Energy
TA = 25°C
TA = 70°C
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
www.irf.com
Symbol
VDS
VGS
ID
IDM
IS
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG
Maximum
N-Channel P-Channel
30
± 20
3.5 -2.3
2.8 -1.8
16 -10
1.7 -1.3
2.0
1.3
44 57
2.0 -1.3
0.25
5.0 -5.0
-55 to + 150 °C
Units
V
A
W
mJ
A
mJ
V/ ns
Symbol
RθJA
Limit
62.5
Units
°C/W
1
09/15/04
1 page  
N-Channel
IRF9952PbF
350
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
300 Crss = Cgd
Coss = Cds + Cgd
250 Ciss
200 Coss
150
100 Crss
50
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 1.8A
16
VDS = 10V
12
8
4
0
0 2 4 6 8 10
QG , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
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| PDF Descargar | [ Datasheet IRF9952PBF.PDF ] | |
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