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IRF2903ZPBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRF2903ZPBF
部品説明 AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRF2903ZPBF Datasheet, IRF2903ZPBF PDF,ピン配置, 機能
PD -96097
AUTOMOTIVE MOSFET
IRF2903ZPbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
HEXFET® Power MOSFET
D VDSS = 30V
G RDS(on) = 2.4m
S ID = 75A
D
G
Gate
S
D
G
TO-220AB
IRF2903ZPbF
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
kJunction-to-Case
iCase-to-Sink, Flat, Greased Surface
ijJunction-to-Ambient
www.irf.com
Max.
260
180
75
1020
290
2.0
± 20
290
820
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.51
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
02/15/07

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