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Datasheet AP1609 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | AP1609 | PWM/PFM DUAL MODE STEP-UP DC/DC CONVERTER AP1609
PWM/PFM DUAL MODE STEP-UP DC/DC CONVERTER
Features
• • • • • • • • • Input Voltage Range: 2.5~6V Output Voltage Range: 3.0~17V (±2.5%) PWM/PFM Switching Control Oscillator Frequency: 300KHz (±20%) High Efficiency: 91% (Typ.) Stand-by Current: ISTB 1 = µA (Typ.) Built-in |  Diodes Incorporated | converter |
| 2 | AP1609 | PWM/PFM Dual Mode Step-up DC/DC Converter AP1609
PWM/PFM Dual Mode Step-up DC/DC Converter Features
- Input Voltage Range: 2.5~6V - Output Voltage Range: 3.0~17V（±2.5%） - PWM/PFM Switching Control - Oscillator Frequency: 300KHz（±20%） - High Efficiency: 91%（Typ .） - Stand-by Current: ISTB＝1µA.（Typ.） - Built-in interna |  Anachip | converter |
AP1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | AP100-B10 | AC Current transducer AP-B10 AC Current transducer AP-B10
Split core transducer for the electronic measurement AC waveforms current, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit). Switch selectable ranges and RMS 0-5V and 0-10V switch selectable voltage output.
IPN = 1  LEM data | | |
| 2 | AP100-B420L | AC Current transducer AP-B420L AC Current transducer AP-B420L
Split core transducer for the electronic measurement AC waveforms current, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit). Switch selectable ranges and RMS 4-20mA current output.
IPN = 10 .. 400 A
Preliminary
LEM data | | |
| 3 | AP1001BSQ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP1001BSQ
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.7mm ) G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 6mΩ 15A
Description
The AP1001BSQ used the latest APEC Power MOSFET silicon technology w  Advanced Power Electronics mosfet | | |
| 4 | AP1001BSQ-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP1001BSQ-3
N-channel Enhancement-mode Power MOSFET
Lead(Pb)-free, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm )
D
BV DSS RDS(ON)
G S
25V 6mΩ 15A
ID
Description
The AP1001BSQ-3 uses the latest APEC Power MOSFET silicon Advanced Power Electronics mosfet | | |
| 5 | AP1002BMX-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP1002BMX-3
N-channel Enhancement-mode Power MOSFET
RoHS-compliant, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm )
D
BV DSS RDS(ON)
G S
30V 1.8mΩ 32A
ID
Description
The AP1002BMX-3 uses the latest APEC Power MOSFET sili Advanced Power Electronics mosfet | | |
| 6 | AP1003BMP-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP1003BMP-3
N-channel Enhancement-mode Power MOSFET
Lead(Pb)-free, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm )
D
BV DSS RDS(ON)
G S
30V 4.5mΩ 18.4A
ID
Description
The AP1003BMP-3 uses the latest APEC Power MOSFET sil Advanced Power Electronics mosfet | | |
| 7 | AP1003BST | N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP1003BST
Preliminary
Advanced Power Electronics Corp.
▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.7mm ) G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 4.7mΩ 17.3A
Description
The AP1003BST used the latest APEC Power MOSFET silicon technology with t Advanced Power Electronics mosfet | | |
| 8 | AP1003BST-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP1003BST-3
N-channel Enhancement-mode Power MOSFET
Lead(Pb)-free, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm )
D
BV DSS RDS(ON)
G S
30V 4.5mΩ 17.3A
ID
Description
The AP1003BST-3 uses the latest APEC Power MOSFET sil Advanced Power Electronics mosfet | | |
| 9 | AP1004CMX-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP1004CMX-3
N-channel Enhancement-mode Power MOSFET
RoHS-compliant, Halogen-free Low Conductance Losses Ultra-low Forward Diode Low Profile (< 0.7mm )
D
BV DSS R DS(ON)
G S
25V 1.8mΩ 32A
ID
Description
The AP1004CMX-3 uses the latest APEC Power MOSFET silico Advanced Power Electronics mosfet | |
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