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IRF4905LPBF の電気的特性と機能

IRF4905LPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF4905LPBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF4905LPBF Datasheet, IRF4905LPBF PDF,ピン配置, 機能
PD - 97034
IRF4905SPbF
IRF4905LPbF
Features
O Advanced Process Technology
O Ultra Low On-Resistance
O 150°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
O Some Parameters Are Differrent from
IRF4905S
O Lead-Free
Description
Features of this design are a 150°C junction oper-
ating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of other
applications.
G
D
HEXFET® Power MOSFET
D VDSS = -55V
RDS(on) = 20m
ID = -42A
S
D
S
GD
D2Pak
IRF4905SPbF
S
GD
TO-262
IRF4905LPbF
Absolute Maximum Ratings
G
Gate
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
ijRθJA Junction-to-Ambient (PCB Mount, steady state)
www.irf.com
D
Drain
S
Source
Max.
-70
-44
-42
-280
170
1.3
± 20
140
790
See Fig.12a, 12b, 15, 16
-55 to + 150
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
Max.
0.75
40
Units
1
8/5/05

1 Page





IRF4905LPBF pdf, ピン配列
1000
100
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
10
1
0.1
-4.5V
60µs PULSE WIDTH
Tj = 25°C
1 10 100
-VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
IRF4905S/L
1000
100
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
10
-4.5V
1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10 100
-VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
1000.0
100.0
10.0
TJ = 25°C
TJ = 150°C
1.0
0.1
3
VDS = -25V
60µs PULSE WIDTH
4 5 6 7 8 9 10 11 12 13 14
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
40
TJ = 25°C
30
TJ = 150°C
20
10
0
0
VDS = -10V
380µs PULSE WIDTH
20 40 60
-ID, Drain-to-Source Current (A)
80
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3


3Pages


IRF4905LPBF 電子部品, 半導体
IRF4905S/L
VDS
L
RG
-20V
tp
D.U.T
IAS
0.01
DRIVER
VDD
A
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
10V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
600
ID
500
TOP -17A
-30A
BOTTOM -42A
400
300
200
100
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
3.6
3.2
ID = -250µA
2.8
2.4
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
www.irf.com

6 Page



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Link :


部品番号部品説明メーカ
IRF4905LPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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