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PDF IRG4CC50WB Data sheet ( Hoja de datos )
| Número de pieza | IRG4CC50WB | |
| Descripción | IGBT Die | |
| Fabricantes | International Rectifier | |
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PD- 91836A
IRG4CC50WB IGBT Die in Wafer Form
IRG4CC50WB
C
G
E
600 V
Size 5
WARP Speed
6" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
Description
Guaranteed (Min/Max)
Test Conditions
VCE (on)
Collector-to-Emitter Saturation Voltage
V(BR)CES Colletor-to-Emitter Breakdown Voltage
VGE(th)
Gate Threshold Voltage
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
Mechanical Data
2.3V Max.
600V Min.
3.0V Min., 6.0V Max.
250 µA Max.
± 1.1 µA Max.
IC = 10A, TJ = 25°C, VGE = 15V
TJ = 25°C, ICES = 250µA, VGE = 0V
VGE = VCE , TJ =25°C, IC =250µA
TJ = 25°C, VCE = 600V
TJ = 25°C, VGE = +/- 20V
Nominal Backmetal Composition, Thickness:
Cr-NiV-Ag ( 1kA-2kA-.2.5kA )
Nominal Front Metal Composition, Thickness:
99% Al, 1% Si (4 microns)
Dimensions:
0.257" x 0.260"
Wafer Diameter:
150mm, with std. < 100 > flat
Wafer thickness:
.015" + / -.003"
Relevant Die Mechanical Dwg. Number
01-5226
Minimum Street Width
100 Microns
Reject Ink Dot Size
0.25mm Diameter Minimum
Ink Dot Location
Consistent throughout same wafer lot
Recommended Storage Environment:
Store in original container, in dessicated
nitrogen, with no contamination
Recommended Die Attach Conditions
For optimum electrical results, die attach
temperature should not exceed 300C
Reference Standard IR packaged part ( for design ) : IRG4PC50W
Die Outline
www.irf.com
01/19/01
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet IRG4CC50WB.PDF ] | |
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