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PDF STRH10N25ESY3 Data sheet ( Hoja de datos )
| Número de pieza | STRH10N25ESY3 | |
| Descripción | Power MOSFETs for Aerospace | |
| Fabricantes | ST Microelectronics | |
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STRH10N25ESY3
N-channel 250V - 0.95Ω - TO-257AA
Rad-hard low gate charge STripFET™ Power MOSFET
General features
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Type
STRH10N25ESY3
VDSS
250V
■ Low RDS(on)
■ Fast switching
■ Single event effect (SEE) hardned
■ Low total gate charge
■ Light weight
■ 100% avalanche tested
■ Application oriented characterization
■ Hermetically sealed
■ Heavy ion SOA
■ 100kRad TID
■ SEL & SEGR with 34Mev/cm²/mg LET ions
3
12
TO-257AA
Internal schematic diagram
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to sustain high TID
and provide immunity to heavy ion effects. It is
therefore suitable as power switch in mainly high-
efficiency DC-DC converters. It is also intended
for any application with low gate charge drive
requirements.
Applications
■ Satellite
■ High reliability applications
Order codes
Part number
STRH10N25ESY1 (1)
STRH10N25ESY3 (2)
Marking
RH10N25ESY1
RH10N25ESY3
1. Mil temp range
2. Space flights parts (full ESA flow screening)
March 2007
Rev 2
Package
TO-257AA
TO-257AA
Packaging
Tube
Tube
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12
1 page  
STRH10N25ESY3
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 125V, ID = 10A,
RG = 4.7Ω, VGS = 12V
Min. Typ.
14
19
27
9
Max Unit
ns
ns
ns
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 10A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12A, di/dt = 100A/µs
VDD= 62V, Tj = 25°C
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12A, di/dt = 100A/µs
VDD= 62V, Tj = 150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max Unit
10
40
1.5
424
3.7
18
498
4.8
19.5
A
A
V
ns
µC
A
ns
µC
A
2.2 Radiation characteristics
The ST Rad-Hard Power MOSFETs are tested to verify the radiation capability. The
technology is extremely resistant to assurance well functioning of the device inside the
radiation environments. Every manufacturing lot is tested for total ionizing dose.
(@Tj=25°C up to 100Krad (a))
Table 8. On/off states
Symbol
Parameter
Test conditions
IDSS
IGSS
BVDSS
VGS(th)
RDS(on)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Drain-to-source breakdown
voltage
Gate threshold voltage
Static drain-source on
resistance
80% BVDss
VGS = ±16V
ID = 1mA, VGS = 0V
VDS =VGS, ID = 1mA
VGS = 12V, ID = 6A
Min. Typ. Max. Unit
10 µA
±100 nA
250
2 4.5
0.95 1.1
V
V
Ω
a. According to ESCC 22900 specification, Co60 gamma rays, dose rags:0.01rad/sec.
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5 Page 
STRH10N25ESY3
5 Revision history
Table 11. Revision history
Date
Revision
18-Dec-2006
1 First release
26-Mar-2007
2 Complete version
Revision history
Changes
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STRH10N25ESY3.PDF ] | |
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