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STRH10N25ESY3 PDF Data sheet ( 特性 )

部品番号 STRH10N25ESY3
部品説明 Power MOSFETs for Aerospace
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 



Total 12 pages
		

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STRH10N25ESY3 Datasheet, STRH10N25ESY3 PDF,ピン配置, 機能
STRH10N25ESY3
N-channel 250V - 0.95- TO-257AA
Rad-hard low gate charge STripFET™ Power MOSFET
General features
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Type
STRH10N25ESY3
VDSS
250V
Low RDS(on)
Fast switching
Single event effect (SEE) hardned
Low total gate charge
Light weight
100% avalanche tested
Application oriented characterization
Hermetically sealed
Heavy ion SOA
100kRad TID
SEL & SEGR with 34Mev/cm²/mg LET ions
3
12
TO-257AA
Internal schematic diagram
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to sustain high TID
and provide immunity to heavy ion effects. It is
therefore suitable as power switch in mainly high-
efficiency DC-DC converters. It is also intended
for any application with low gate charge drive
requirements.
Applications
Satellite
High reliability applications
Order codes
Part number
STRH10N25ESY1 (1)
STRH10N25ESY3 (2)
Marking
RH10N25ESY1
RH10N25ESY3
1. Mil temp range
2. Space flights parts (full ESA flow screening)
March 2007
Rev 2
Package
TO-257AA
TO-257AA
Packaging
Tube
Tube
1/12
www.st.com
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Power MOSFETs for Aerospace

ST Microelectronics
ST Microelectronics

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