DataSheet.jp

EIB3439-4P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 EIB3439-4P
部品説明 4W Internally Matched Power FET
メーカ Excelics Semiconductor
ロゴ Excelics Semiconductor ロゴ 



Total 1 pages
		

No Preview Available !

EIB3439-4P Datasheet, EIB3439-4P PDF,ピン配置, 機能
UPDATED 03/02/2006
EIB3439-4P
3.40-3.90 GHz 4W Internally Matched Power FET
FEATURES
3.40-3.90 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
12.0 dB Power Gain at 1dB Compression
30% Power Added Efficiency
Non-Hermetic Metal Flange Package
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
.120 MIN
.827 .669
Excelics
EIC3439-4P
.120 MIN
.020
.400
YYWW
SN
SN
.052
.084
.126
.508
.450
.004
ALL DIMENSIONS IN INCHES
.105
.161
Caution! ESD sensitive device.
SYMBOL
P1dB
G1dB
www.DataSheet4U.com
G
PAE
Id1dB
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 3.40-3.90GHz
VDS = 8 V, IDSQ 1600mA
Gain at 1dB Compression
f = 3.40-3.90GHz
VDS = 8 V, IDSQ 1600mA
Gain Flatness
f = 3.40-3.90GHz
VDS = 8 V, IDSQ 1600mA
Power Added Efficiency at 1dB Compression
VDS = 8 V, IDSQ 1600mA
f = 3.40-3.90GHz
Drain Current at 1dB Compression f = 3.40-3.90GHz
MIN
35.5
TYP
36.5
11.0 12.0
30
1700
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
2800
VP Pinch-off Voltage
VDS = 3 V, IDS = 28 mA
-2.0
RTH Thermal Resistance2
5.5
Note: 1) Tested with 100 Ohm gate resistor.
2) Overall Rth depends on case mounting.
MAX UNITS
dBm
dB
±0.6
dB
2000
3500
-3.5
6.0
%
mA
mA
V
oC/W
ABSOLUTE MAXIMUM RATING1,2
SYMBOL
CHARACTERISTIC
ABSOLUTE1
CONTINUOUS2
VDS Drain to Source Voltage
12 V
VGS Gate to Source Voltage
-6.0 V
IGSF Forward Gate Current
43.2 mA
IGSR Reserve Gate Current
-7.2 mA
PIN Input Power
36.5 dBm
TCH Channel Temperature
175°C
TSTG
Storage Temperature
-65/+175°C
PT Total Power Dissipation
25 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
8V
-4.0 V
14.4 mA
-2.4 mA
@ 3dB compression
175°C
-65/+175°C
25 W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised March 2006

1 Page





ページ 合計 : 1 ページ
PDF
ダウンロード
[ EIB3439-4P.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
EIB3439-4P

4W Internally Matched Power FET

Excelics Semiconductor
Excelics Semiconductor

www.DataSheet.jp    |   2019   |  メール    |   最新    |   Sitemap