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Datasheet FVP18030IM3LSG1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FVP18030IM3LSG1 | Sustain FVP18030IM3LSG1 Sustain
March 2007
FVP18030IM3LSG1
Sustain
Features
• Use of high speed 300V IGBTs with parallel FRDs • Single-grounded power supply by means of built-in HVIC • Sufficient current driving capability for IGBTs due to adding a buffer • Isolation rating of 1500Vrms/min. • Lo |  Fairchild Semiconductor | data |
FVP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FVP12030IM3LEG1 | Energy Recovery FVP12030IM3LEG1 Energy Recovery
March 2007
FVP12030IM3LEG1
Energy Recovery
Feature
• Use of high speed 300V IGBTs with parallel FRDs • Single-grounded power supply by means of built-in HVIC • Sufficient current driving capability for IGBTs due to adding a buffer • Isolation rating of 1500V Fairchild Semiconductor data | | |
| 2 | FVP18030IM3LSG1 | Sustain FVP18030IM3LSG1 Sustain
March 2007
FVP18030IM3LSG1
Sustain
Features
• Use of high speed 300V IGBTs with parallel FRDs • Single-grounded power supply by means of built-in HVIC • Sufficient current driving capability for IGBTs due to adding a buffer • Isolation rating of 1500Vrms/min. • Lo Fairchild Semiconductor data | |
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