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FVP12030IM3LEG1 の電気的特性と機能

FVP12030IM3LEG1のメーカーはFairchild Semiconductorです、この部品の機能は「Energy Recovery」です。


製品の詳細 ( Datasheet PDF )

部品番号 FVP12030IM3LEG1
部品説明 Energy Recovery
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FVP12030IM3LEG1 Datasheet, FVP12030IM3LEG1 PDF,ピン配置, 機能
FVP12030IM3LEG1
Energy Recovery
March 2007
PDP SPMTM
Feature
• Use of high speed 300V IGBTs with parallel FRDs
• Single-grounded power supply by means of built-in HVIC
• Sufficient current driving capability for IGBTs due to adding a
buffer
• Isolation rating of 1500Vrms/min.
• Low leakge current due to using an insulated metal sub-
strates
Applications
• Energy Recovery Part of a PDP (Plasma Display Panel)
General Description
It is an advanced smart power module(SPMTM) that Fairchild
has newly developed and designed to provide very compact
and optimized performance for the energy recovery circuit of
PDP driving system. It combines optimized circuit protection
and drive matched to low-loss and high speed IGBTs. Under
voltage lock-out protection function enhances the system reli-
ability . The high speed built-in HVIC provides opto-couplerless
single power supply IGBT gate driving capability that futher
reduce the overall system size of PDP sustaining boards.
Package Outlines
Figure 1.
©2006 Fairchild Semiconductor Corporation
FVP12030IM3LEG1 Rev. A
1
www.fairchildsemi.com

1 Page





FVP12030IM3LEG1 pdf, ピン配列
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
Pin Name
COML
VINL
VCCL
VBL
GL
VSL
IGND
COMH
VINH
VCCH
VBH
GH
VSH
CH
EH
KH
AL
CL
EL
Pin Descriptions
Low-side Signal Ground
Low-side Signal Input
Low-side Supply Voltage for HVIC
Low-side Floating Supply Voltage for Buffer IC and IGBT Driving
Low-side Gate
Low-side Floating Ground for Buffer IC and IGBT Driving
IMS Ground
High-side Signal Ground
High-side Signal Input
High-side Supply Voltage for HVICg
High-side Floating Supply Voltage for Buffer IC and IGBT Driving
High-side Gate
High-side Floating Ground for Buffer IC and IGBT Driving
High-side IGBT Collector
High-side IGBT Emitter
High-side Diode Cathode
Low-side Diode Anode
Low-side IGBT Collector
Low-side IGBT Emitter
FVP12030IM3LEG1 Rev. A
3
www.fairchildsemi.com


3Pages


FVP12030IM3LEG1 電子部品, 半導体
Electrical Characteristics (TC = 25°C, Unless Otherwise Specified)
Symbol
Parameter
Conditions
IQCC
IQBS
Quiescent VCC Supply
Current
Quiescent VBS Supply
Current
VCC = 15V
VINL, VINH = 0V
VBS = 15V
VINL, VINH= 0V
VCCL-COML,
VCCH-COMH
VBL- VSL, VBH- VSH
UVBSD
Supply Circuit Under Volt-
age Protection
Detection Level
UVBSR
VIN(ON)
VIN(OFF)
ON Threshold Voltage
OFF Threshold Voltage
Reset Level
Applied between VINL-COML, ,VINH - COMH
Min.
-
-
10.1
10.5
3.0
-
Typ. Max. Units
- 100 µA
- 500 µA
11.3 12.5
11.7 12.9
--
- 0.8
V
V
V
V
Symbol
Parameter
Condition
Min.
VCE(SAT)
IGBT Collector-Emitter
Saturation Voltage
VF
tdON
tr
tdOFF
tF
ICES
IR
Diode Forward Voltage
Switching Times
IGBT Collector-Emitter
Leakage Current
Diode Anode-Cathode
Leakage Current
VCC = VBS = 15V
VIN = 5V
Between CL to AL
Between KH to EH
Between EH to CH
Between EL to CL
IC = 25A, TJ = 25°C
IC = 120A, TJ = 25°C
IF =30A, TJ = 25°C
IF =10A, TJ = 25°C
VCE=200V, VCC= VBS=15V
Ic = 20A
VIN = 0V V , Inductive Load
Tc = 25°C
(Note2)
VCE = 300V
Between CL to AL
Between KH to EH
Between EH to CH
Between EL to CL
VAnode-Cathode=300V
VAnode-Cathode=300V
-
-
-
-
-
-
Notes :
2 tON and tOFF include the propagation delay time of internal drive IC. For the detailed information, please see Figure 4.
Typ.
-
1.9
-
-
230
55
270
48
-
-
Max.
1.4
-
Units
V
V
1.4 V
1.7 V
ns
ns
ns
ns
250 µA
250 µA
250 µA
VIN
VCE
IC
90% of IC
td(on)
10% of IC
tr
VIN
IC
VCE
td(off)
90% of IC
tf
10% of Ic
Figure 4. Switching Time Definition
FVP12030IM3LEG1 Rev. A
6
www.fairchildsemi.com

6 Page



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共有リンク

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部品番号部品説明メーカ
FVP12030IM3LEG1

Energy Recovery

Fairchild Semiconductor
Fairchild Semiconductor


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