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FGPF90N30のメーカーはFairchild Semiconductorです、この部品の機能は「PDP IGBT」です。 |
部品番号 | FGPF90N30 |
| |
部品説明 | PDP IGBT | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFGPF90N30ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
FGPF90N30
300V, 90A PDP IGBT
Features
• High Current Capability
• Low saturation voltage: VCE(sat) =1.5V @ IC = 60A
• High Input Impedance
• Fast switch
• RoHS Complaint
Application
. PDP System
October 2006
tm
Description
Employing Unified IGBT Technology, Fairchild's PDP IGBTs
provides low conduction and switching loss. FGPF90N30 offers
the optimum solution for PDP applications where low-condution
loss is essential.
TO-220F
1
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
www.DataSheet4U.com
Symbol
VCES
VGES
IC pulse(1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 25oC
@ TC = 100οC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Notes:
(1)Repetitive test , pluse width = 100usec , Duty = 0.1
* Ic_pluse limited by max Tj
FGPF90N30
300
± 30
220
56.8
22.7
-55 to +150
-55 to +150
300
Units
V
V
A
W
W
oC
oC
oC
Typ.
--
--
Max.
2.2
62.5
Units
oC/W
oC/W
©2006 Fairchild Semiconductor Corporation
FGPF90N30 Rev. A
1
www.fairchildsemi.com
1 Page Typical Performance CharacteristicsTypical Saturation VoltageCharacteristics
Figure 1. Typical Output Characteristics
240
TC = 25oC
20V
180
15V
12V
Figure 2. Typical Output Characteristics
240
TC = 125oC
20V
180
15V
12V
120 10V 120
10V
60
VGE = 8V
0
02468
Collector-Emitter Voltage, VCE [V]
Figure 3. Saturation Voltage
240
Common Emitter
VGE = 15V
180 TC = 25oC
TC = 125oC
10
120
60 VGE = 8V
0
02468
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
240
VCE = 20V
180
10
120
60
60
125oC
25oC
0
024
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2.0
90A
1.8
5
1.6 60A
1.4
1.2 IC = 30A
Common Emitter
VGE = 15V
1.0
25 50 75 100
Collector-ECase Temperature, TC [oC]
125
0
0 4 8 12 16
Gate-Emitter Voltage, [V]
Figure 6. Saturation Voltage vs.VGE
20
20
Common Emitter
T
C
=
25oC
16
12
8
90A
4
60A
IC =30A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
3 www.fairchildsemi.com
FGPF90N30 Rev. A
3Pages TO-220F
10.16 ±0.20
(7.00)
ø3.18 ±0.10
2.54 ±0.20
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
0.35 ±0.10
2.54TYP
[2.54 ±0.20]
#1
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
0.50
+0.10
–0.05
2.76 ±0.20
6 www.fairchildsemi.com
FGPF90N30 Rev. A
6 Page | |||
ページ | 合計 : 7 ページ | ||
|
PDF ダウンロード | [ FGPF90N30 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
FGPF90N30 | PDP IGBT | Fairchild Semiconductor |