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PDF FGA90N30D Data sheet ( Hoja de datos )
| Número de pieza | FGA90N30D | |
| Descripción | PDP IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGA90N30D
300V PDP IGBT
Features
• High Current Capability
• Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 20A
• High Input Impedance
September 2006
Description
Employing Unified IGBT Technology, FGA90N30D provides low
conduction and switching loss. FGA90N30D offers the optimum
solution for PDP applications where low condution loss is
essential.
C
GCE
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM
IF
IFM
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Diode Maximum Forward Current
@wwTw.CDa=taShe2e5t4°UC.com
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
G
E
FGA90N30D
300
± 30
90
220
10
40
219
87
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.57
1.56
40
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGA90N30D Rev. A
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Charaacteristics
6
C o m m o n E m itte r
T = 125 oC
C
5
4
3
2
1
10A
20A
40A
90A
0
4
8 12 16
G a te - E m itte r V o lta g e , V [V ]
GE
20
1000
C ie s
Coes
C res
100
C o m m o n E m itte r
V = 0V, f = 1MHz
GE
T = 25oC
C
0.1 1 10
C o lle cto r-E m itte r V o lta g e , V [V ]
CE
Figure 9. Gate Charge Characteristics
Figure 10. SOA Characteristics
15
C o m m o n E m itte r
R = 10 ohm
L
T = 2 5 oC
C
10
Vcc = 200V
5
0
0
10 20 30 40 50 60 70 80 90
G a te C ha rge , Q [nC ]
g
Figure 11. Turn-On Characteristics vs. Gate
Resistance
1000
C om m o n E m itte r
V = 200V, V = 15V
CC GE
I = 20A
C
T = 25oC
C
T = 125oC
C
tr
100
td (o n )
10
0
20 40 60 80
G a te R e sista n ce , R [Ω ]
G
100
Ic M AX (Pulsed)
100
Ic M AX (C ontinuous)
10
DC O peration
50μs
100μs
1ms
1
S ingle N onrepetitive
0.1 P ulse T c = 25oC
Curves m ust be derated
linearly with increase
in tem perature
0.01
0.1 1
10
100
C ollector - Em itter Voltage, V [V]
CE
1000
Figure 12. Turn-Off Characteristics vs. Gate
Resistance
1000
tf
100
td (o ff)
10
0
C o m m o n E m itte r
V = 200V, V = 15V
CC GE
I = 20A
C
T = 25oC
C
T = 125oC
C
20 40 60 80 100
G a te R e s is ta n c e , R [Ω ]
G
5 www.fairchildsemi.com
FGA90N30D Rev. A
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGA90N30D.PDF ] | |
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