(PDF) AP2304N Datasheet - N-CHANNEL ENHANCEMENT MODE

Número de pieza	AP2304N
Descripción	N-CHANNEL ENHANCEMENT MODE
Fabricantes	Advanced Power Electronics
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No Preview Available ! AP2304N Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small package outline ▼ Surface mount package D Description SOT-23 G S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. BVDSS RDS(ON) ID 25V 117mΩ 2.7A D Absolute Maximum Ratings Symbol www.DataSheet4U.com Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 G S Rating 25 ±20 2.7 2.2 10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max. Value 90 Unit ℃/W Data and specifications subject to change without notice 200420043 1 page

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PDF AP2304N Data sheet ( Hoja de datos )