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IRHNJ7430SE の電気的特性と機能

IRHNJ7430SEのメーカーはInternational Rectifierです、この部品の機能は「RADIATION HARDENED POWER MOSFET SURFACE MOUNT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHNJ7430SE
部品説明 RADIATION HARDENED POWER MOSFET SURFACE MOUNT
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHNJ7430SE Datasheet, IRHNJ7430SE PDF,ピン配置, 機能
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
PD - 93830B
IRHNJ7430SE
JANSR2N7466U3
500V, N-CHANNEL
REF: MIL-PRF-19500/676
RAD HardHEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHNJ7430SE 100K Rads (Si)
RDS(on)
1.77
ID
4.4A
QPL Part Number
JANSR2N7466U3
International Rectifier’s RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
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DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
SMD-0.5
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
4.4
2.8
17.6
75
0.6
±20
150
4.4
7.5
2.5
-55 to 150
300 (for 5s)
1.0(Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
02/07/03

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IRHNJ7430SE pdf, ピン配列
Radiation Characteristics
IRHNJ7430SE, JANSR2N7466U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source „
On-State Resistance (SMD-0.5)
Diode Forward Voltage „
100K Rads (Si)
Min Max
500 —
2.0 4.5
— 100
— -100
— 50
— 1.77
— 1.77
— 1.2
Units
V
nA
µA
V
Test Conditions ˆ
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 400V, VGS=0V
VGS = 12V, ID = 2.8A
VGS = 12V, ID = 2.8A
VGS = 0V, ID = 4.4A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
MeV/(mg/cm2))
Cu 28
Br 36.8
Energy
(MeV)
285
305
Range
(µm) @VGS=0V @VGS=-5V
43 375
375
39 350
350
VDS (V)
@VGS=-10V
375
350
@VGS=-15V
375
325
@VGS=-20V
375
300
400
300
200
100
0
0
-5 -10 -15 -20
VGS
Cu
Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHNJ7430SE 電子部品, 半導体
IRHNJ7430SE, JANSR2N7466U3
Pre-Irradiation
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x ZthJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 www.irf.com

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部品番号部品説明メーカ
IRHNJ7430SE

RADIATION HARDENED POWER MOSFET SURFACE MOUNT

International Rectifier
International Rectifier


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