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IRK.F102 の電気的特性と機能

IRK.F102のメーカーはInternational Rectifierです、この部品の機能は「FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRK.F102
部品説明 FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRK.F102 Datasheet, IRK.F102 PDF,ピン配置, 機能
Bulletin I27097 rev. A 09/97
FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
IRK.F102.. SERIES
INT-A-pakä Power Modules
Features
Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 VRMS isolating voltage
Industrial standard package
UL E78996 approved
Description
These series of INT-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heatwiwnwg.DaatanShdeet4U.com
others where fast switching characteristics are required.
105 A
Major Ratings and Characteristics
Parameters
IRK.F102..
Units
I T(AV)
IT(RMS)
I TSM
I2t
@ TC
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
I2t
105
90
233
2850
3000
40.8
37.2
408
A
°C
A
A
A
KA2s
KA2s
KA2s
tq
trr
VDRM / V RRM
TJ range
20 and 25
2
up to 1200
- 40 to 125
µs
µs
V
oC
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IRK.F102 pdf, ピン配列
Switching
Parameter
di/dt Maximum non-repetitive rate of rise
trr Maximum recovery time
tq Maximum turn-off time
IRK.F102.. Series
Bulletin I27097 rev. A 09/97
IRK.F102..
800
2
KJ
20 25
Units Conditions
A/µs
µs
µs
Gate drive 20V, 20, tr 1ms, VD= 80% VDRM
TJ = 25°C
ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C
ITM = 350A, TJ = 125°C, di/dt = -25A/µs,
V = 50V, dv/dt = 400V/µs linear to 80% V
R DRM
Blocking
Parameter
dv/dt
VINS
IRRM
I
DRM
Maximum critical rate of rise of off-state
voltage
RMS isolation voltage
Maximum peak reverse and off-state
leakage current
IRK.F102..
1000
3000
30
Units Conditions
V/µs T = 125°C., exponential to = 67% V
J DRM
V 50 Hz, circuit to base, TJ = 25°C, t = 1 s
mA TJ = 125°C, rated VDRM/VRRM applied
Triggering
Parameter
PGM
P G(AV)
IGM
-V
GM
IGT
V
GT
IGD
V GD
Maximum peak gate power
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Max. DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
IRK.F102..
40
2
5
5
200
3
20
0.25
Units Conditions
W f = 50 Hz, d% = 50
W TJ = 125°C, f = 50Hz, d% = 50
A TJ = 125°C, tp < 5ms
V
mA TJ = 25°C, Vak 12V, Ra = 6
V
mA TJ = 125°C, rated VDRM applied
V
Thermal and Mechanical Specifications
Parameter
IRK.F102..
TJ
Tstg
RthJC
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to
case
RthC-hs Max. thermal resistance, case to
heatsink
T Mounting torque ± 10% IAP to heatsink
- 40 to 125
- 40 to 150
0.25
0.035
4 - 6 (35 - 53)
busbar to IAP 4 - 6 (35 - 53)
wt Approximate weight
500 (17.8)
Units Conditions
°C
K/W Per junction, DC operation
K/W Mounting surface flat and greased
Per module
Nm
(lb*in)
g (oz)
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
lubricated with a compound
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3Pages


IRK.F102 電子部品, 半導体
IRK.F102.. Series
Bulletin I27097 rev. A 09/97
200
180
180°
120°
160 90°
60°
140 30°
120
RMS Limit
100
80
Conduction Angle
60
40 IRK.F102.. Series
Per Junction
20 T J= 125°C
0
0 20 40 60 80 100 120
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
2600
2400
2200
At Any Rated Load Condition And With
Rated V RRMApplied Following Surge.
Initial T J = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
2000
1800
1600
IRK.F102.. Series
Per Junction
1400
1 10
100
Number Of Equal Amplitude Half Cycle Curre nt Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
10000
1000
T J= 25°C
100 T J= 125°C
IRK.F102.. Series
Per Junction
10
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
6
280
DC
240 180°
120°
90°
200 60°
30°
160
RMS Limit
120
80
40
0
0
20 40 60
Conduction Period
IRK.F102.. Series
Per Junction
T J = 125°C
80 100 120 140 160 180
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
3000
2800
2600
2400
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
No Voltage Reapplied
Rated VRRMReapplied
2200
2000
1800
1600 IRK.F102.. Series
Per Jun ction
1400
0.01
0.1
Pulse Train Duration (s)
1
Fig. 6 - Maximum Non-Repetitive Surge Current
1
Steady State Value
R thJC= 0.17 K/W
(DC Operation)
0.1
0.01
IRK.F102.. Series
Per Junction
0.001
0.001 0.01 0.1 1 10 100
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
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部品番号部品説明メーカ
IRK.F102

FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

International Rectifier
International Rectifier


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