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IRFSL3207ZPBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSL3207ZPBF
部品説明 (IRFx3207ZPBF) HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRFSL3207ZPBF Datasheet, IRFSL3207ZPBF PDF,ピン配置, 機能
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
G
PD - 97213
IRFB3207ZPbF
IRFS3207ZPbF
IRFSL3207ZPbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max
S ID
75V
3.3m:
4.1m:
170A
D DD
S
GD
TO-220AB
IRFB3207ZPbF
S
G
D2Pak
IRFS3207ZPbF
S
D
G
TO-262
IRFSL3207ZPbF
www.DataSheet4U.com
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current d
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
IAR Avalanche Current c
EAR Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case k
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220 k
Junction-to-Ambient (PCB Mount) , D2Pak jk
G
Gate
D
Drain
S
Source
Max.
170c
120c
670
300
2.0
± 20
16
-55 to + 175
300
10lbxin (1.1Nxm)
180
75
30
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
05/29/06

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