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IRFSL3207ZPBFのメーカーはInternational Rectifierです、この部品の機能は「(IRFx3207ZPBF) HEXFET Power MOSFET」です。 |
部品番号 | IRFSL3207ZPBF |
| |
部品説明 | (IRFx3207ZPBF) HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFSL3207ZPBFダウンロード(pdfファイル)リンクがあります。 Total 11 pages
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
G
PD - 97213
IRFB3207ZPbF
IRFS3207ZPbF
IRFSL3207ZPbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max
S ID
75V
3.3m:
4.1m:
170A
D DD
S
GD
TO-220AB
IRFB3207ZPbF
S
G
D2Pak
IRFS3207ZPbF
S
D
G
TO-262
IRFSL3207ZPbF
www.DataSheet4U.com
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current d
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
IAR Avalanche Current c
EAR Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case k
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220 k
Junction-to-Ambient (PCB Mount) , D2Pak jk
G
Gate
D
Drain
S
Source
Max.
170c
120c
670
300
2.0
± 20
16
-55 to + 175
300
10lbxin (1.1Nxm)
180
75
30
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
05/29/06
1 Page 1000
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
4.5V
IRFB/S/SL3207ZPbF
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
4.5V
10
0.1
≤60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100 TJ = 175°C
10 TJ = 25°C
10
0.1
≤60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.5
ID = 75A
VGS = 10V
2.0
1.5
1
VDS = 25V
≤60µs PULSE WIDTH
0.1
234567
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
12.0
10.0
8.0
ID= 75A
VDS= 60V
VDS= 38V
VDS= 15V
6.0
4.0
2.0
0.0
0
20 40 60 80 100 120 140
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
3Pages IRFB/S/SL3207ZPbF
4.5
4.0
3.5
3.0
2.5
2.0 ID = 150µA
ID = 250µA
1.5 ID = 1.0mA
1.0 ID = 1.0A
0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
20
IF = 45A
VR = 64V
15 TJ = 25°C
TJ = 125°C
10
20
IF = 30A
VR = 64V
15 TJ = 25°C
TJ = 125°C
10
5
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
340
IF = 30A
VR = 64V
260 TJ = 25°C
TJ = 125°C
180
5 100
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
340
IF = 45A
VR = 64V
260 TJ = 25°C
TJ = 125°C
180
20
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 19 - Typical Stored Charge vs. dif/dt
100
20
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com
6 Page | |||
ページ | 合計 : 11 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFSL3207ZPBF | (IRFx3207ZPBF) HEXFET Power MOSFET | International Rectifier |