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IRF7832PBF の電気的特性と機能

IRF7832PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7832PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7832PBF Datasheet, IRF7832PBF PDF,ピン配置, 機能
PD - 95016A
IRF7832PbF
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
l Lead-Free
VDSS
30V
S
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% tested for Rg
S
S
G
HEXFET® Power MOSFET
RDS(on) max
Qg
:4.0m @VGS = 10V 34nC
AA
1 8D
2 7D
3 6D
4 5D
Top View
SO-8
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Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 20
20
16
160
2.5
1.6
0.02
-55 to + 155
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
fRθJL Junction-to-Drain Lead
RθJA Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes  through „ are on page 10
www.irf.com
1
06/30/05

1 Page





IRF7832PBF pdf, ピン配列
IRF7832PbF
1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.25V
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.25V
1
0.1
0.01
0.1
2.25V
20µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
10
2.25V
1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
1000
100
TJ = 150°C
10
TJ = 25°C
1
0
2.0
VDS = 15V
20µs PULSE WIDTH
2.5 3.0 3.5
VGS, Gate-to-Source Voltage (V)
4.0
Fig 3. Typical Transfer Characteristics
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2.0
ID = 16A
VGS = 4.5V
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF7832PBF 電子部品, 半導体
IRF7832PbF
10 600
ID = 20A
8 500
400
6 TJ = 125°C
300
4
200
TJ = 25°C
2
100
ID
TOP 7.0A
13A
BOTTOM 16A
0
2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
VDS
L
RG
2V0GVS
tp
D.U.T
IAS
0.01
15V
DRIVER
+
-
VDD
A
I AS
V(BR)DSS
tp
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
Fig 14. Unclamped Inductive Test Circuit
and Waveform
LD
VDS
+
VDD -
IG ID
Current Sampling Resistors
Fig 15. Gate Charge Test Circuit
VDS
90%
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 16. Switching Time Test Circuit
6
10%
VGS
td(on) tr
td(off) tf
Fig 17. Switching Time Waveforms
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共有リンク

Link :


部品番号部品説明メーカ
IRF7832PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRF7832PBF-1

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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