|
|
IRF7832PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRF7832PBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7832PBFダウンロード(pdfファイル)リンクがあります。 Total 10 pages
PD - 95016A
IRF7832PbF
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
l Lead-Free
VDSS
30V
S
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% tested for Rg
S
S
G
HEXFET® Power MOSFET
RDS(on) max
Qg
:4.0m @VGS = 10V 34nC
AA
1 8D
2 7D
3 6D
4 5D
Top View
SO-8
www.DataSheet4U.com
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 20
20
16
160
2.5
1.6
0.02
-55 to + 155
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
fRθJL Junction-to-Drain Lead
RθJA Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes through are on page 10
www.irf.com
1
06/30/05
1 Page IRF7832PbF
1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.25V
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.25V
1
0.1
0.01
0.1
2.25V
20µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
10
2.25V
1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
1000
100
TJ = 150°C
10
TJ = 25°C
1
0
2.0
VDS = 15V
20µs PULSE WIDTH
2.5 3.0 3.5
VGS, Gate-to-Source Voltage (V)
4.0
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0
ID = 16A
VGS = 4.5V
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7832PbF
10 600
ID = 20A
8 500
400
6 TJ = 125°C
300
4
200
TJ = 25°C
2
100
ID
TOP 7.0A
13A
BOTTOM 16A
0
2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
VDS
L
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
15V
DRIVER
+
-
VDD
A
I AS
V(BR)DSS
tp
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
Fig 14. Unclamped Inductive Test Circuit
and Waveform
LD
VDS
+
VDD -
IG ID
Current Sampling Resistors
Fig 15. Gate Charge Test Circuit
VDS
90%
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 16. Switching Time Test Circuit
6
10%
VGS
td(on) tr
td(off) tf
Fig 17. Switching Time Waveforms
www.irf.com
6 Page | |||
ページ | 合計 : 10 ページ | ||
|
PDF ダウンロード | [ IRF7832PBF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF7832PBF | HEXFET Power MOSFET | International Rectifier |
IRF7832PBF-1 | Power MOSFET ( Transistor ) | International Rectifier |