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8550S PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 8550S
部品説明 TRANSISTOR
メーカ Jiangsu Changjiang Electronics
ロゴ Jiangsu Changjiang Electronics ロゴ 



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8550S Datasheet, 8550S PDF,ピン配置, 機能
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8550S TRANSISTOR PNP
FEATURE
Power dissipation
PCM : 0.625 W Tamb=25
Collector current
ICM : -0.5 A
Collector-base voltage
V(BR)CBO : -40 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
TO 92
1.EMITTER
2. COLLECTOR
3.BASE
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CBO Ic= -100 , IE=0
V(BR)CEO Ic= -0.1 mA
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V(BR)EBO
IE= -100 A
IB=0
IC=0
-40
-25
-5
V
V
V
Collector cut-off current
ICBO VCB= -40 V , IE=0
-0.1 A
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
ICEO
IEBO
hFE 1
hFE 2
VCE(sat)
VCE= -20 V , IB=0
VEB= - 3 V IC=0
VCE= -1 V, IC= -50m A
VCE= -1 V, IC= -500m A
IC=-500mA, IB=-50 mA
85
50
-0.1 A
-0.1 A
300
-0.6 V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=-500mA, IB=-50 mA
VCE=- 6 V, IC=-20mA
f =30MHz
150
-1.2 V
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
B
85-160
C
120-200
D
160-300

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