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Número de pieza | STW14NM50 | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STW14NM50 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! STW14NM50
N-CHANNEL 550V @ Tjmax - 0.32Ω - 14A TO-247
MDmesh™ MOSFET
Table 1: General Features
TYPE
VDSS
(@Tjmax)
RDS(on)
ID
STW14NM50
550 V
< 0.35 Ω
14 A
s TYPICAL RDS(on) = 0.32 Ω
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE RATED
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
Figure 1: Package
TO-247
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET Figure 2: Internal Schematic Diagram
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizon-
tal layout. The resulting product has anwww.DataSheet4U.com
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprierati strip tech-
nique yields overall dynamic performance that is
significantly better than that of similar completi-
tion’s products.
APPLICATIONS
The MDmesh™ family is very suitablr for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
Table 2: Order Codes
SALES TYPE
STW14NM50
MARKING
W14NM50
PACKAGE
TO-247
PACKAGING
TUBE
July 2004
Rev. 5
1/9
1 page STW14NM50
Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 11: Dource-Drain Diode Forward Char-
acteristics
5/9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet STW14NM50.PDF ] |
Número de pieza | Descripción | Fabricantes |
STW14NM50 | N-CHANNEL POWER MOSFET | ST Microelectronics |
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