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US104SのメーカーはUnisonic Technologiesです、この部品の機能は「SCRs」です。 |
部品番号 | US104S |
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部品説明 | SCRs | ||
メーカ | Unisonic Technologies | ||
ロゴ | |||
このページの下部にプレビューとUS104Sダウンロード(pdfファイル)リンクがあります。 Total 4 pages
UTC US104S/N
SCR
SCRs
DESCRIPTION
Thanks to highly sensitive triggering levels, the
UTC US104S is suitable for all applications where the
available gate current is limited, such as motor control
for hand tools, kitchen aids, overvoltage
crowbar protection for low power supplies, ...
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
SYMBOL
1
AK
G
TO-220
1: CATHODE 2: ANODE 3: GATE
ABSOLUTE RATINGS
PARAMETER
Repetitive peak off-state voltages and Repetitive peak reverse voltage
US104Sww/Nw.-D4ataSheet4U.com
US104S/N-6
US104S/N-8
RMS on-state current (180° conduction angle) (Tc = 115°C)
Average on-state current (180° conduction angle) (Tc = 115°C)
Non repetitive surge peak on-state current (Tj = 25°C)
tp=8.3ms
tp=10ms
I²t Value for fusing (tp = 10 ms, Tj = 25°C)
Critical rate of rise of on-state current
(IG = 2 x IGT , tr ≤ 100 n s, F= 60 Hz ,Tj = 125°C)
Peak gate current (tp=20µs, Tj = 125°C)
Average gate power dissipation (Tj = 125°C)
Storage junction temperature range
Operating junction temperature range
SYMBOL
VDRM, VRRM
IT(RMS)
IT(AV)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
RATING UNIT
400
600
V
800
4A
2.5 A
33
30
4.5
50
1.2
0.2
-40 ~ +150
-40 ~ +125
A
A²S
A/µs
A
W
°C
°C
UTC US104S(SENSITIVE) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN MAX. UNIT
Gate trigger Current
IGT VD = 12 V, RL =33Ω
200 µA
Gate trigger Voltage
VGT VD = 12 V, RL=33Ω
0.8 V
Gate non-trigger voltage
VGD
VD = VDRM, RL = 3.3 kΩ, RGK = 220Ω
Tj = 125°C
0.1
V
Reverse gate voltage
Holding Current
VRG IRG = 10 µA
IH IT = 50 mA, RGK = 1 kΩ
8V
5 mA
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R301-011,C
1 Page UTC US104S/N
SCR
Fig.1:Maximum average power dissipation vs
average on-state current
P/W
4.0
3.5 α=180°
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
360°
IT(av)(A)
1.0 1.5 2.0
α
2.5
Figure.3:Relative variation of gate trigger current
and holding current vs junction temperature.
3.0
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
2.0
1.8
1.6
1.4 IGT
1.2 IH&IL
1.0 Rgk=1kΩ
0.8
0.6
0.4
0.2 Tj(℃)
0.0
-40 -20 0 20 40 60 80 100 120
140
Figure.2:Average and D.C. on-state current
vs case temperature
IT(av)(A)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
DC
α=180°
1.5
1.0
0.5 Tcase(℃)
0.0
0 25 50 75 100 125
Figure.4:Relative variation of holding current vs
gate-cathode vesistance(typical values).
5 IH(Rgk)/IH(Rgk=1kΩ)
4
3
2
1
0
1E-2
Rgk(kΩ)
1E-1
1E+0
Tj=25℃
1E+1
Fig.5: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values).
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
10.00
Tj=125℃
VD=0.67* VDRM
1.00
0.10
Rgk(Ω)
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig.6: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values).
10 dV/dt(Cgk)/dV/dt(Rgk=220Ω)
Tj=125℃
8
VD=0.67* VDRM
Rgk=220Ω
6
4
2
Cgk(nF)
0
0 2 4 6 8 10 12 14 16 18 20 22
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R301-011,C
3Pages | |||
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部品番号 | 部品説明 | メーカ |
US104N | SCRs | Unisonic Technologies |
US104S | SCRs | Unisonic Technologies |